TY - JOUR
T1 - Controlled planar interface synthesis by ultrahigh vacuum diffusion bonding/deposition
AU - Kim, M. J.
AU - Carpenter, Ray
AU - Cox, M. J.
AU - Xu, J.
N1 - Funding Information:
This research was supported by the Division of Materials Sciences, United States Department of Energy, under Grant No. DE-FG03-94ER45510. We are grateful to Dr. W. King for providing access to his interface synthesis laboratory at Lawrence Livermore National Laboratory for one of us (M.J.K.) during the early stage of this project. We also appreciate Mr. T. Karcher and our mechanical instrument shop staff for their assistance during the construction of the bonding unit.
PY - 2000/4
Y1 - 2000/4
N2 - An ultrahigh vacuum (UHV) diffusion bonding/deposition instrument was designed and constructed, which can produce homophase and heterophase planar interfaces from a wide array of materials. The interfaces are synthesized in situ by diffusion bonding of two substrates with or without various interfacial layers, at temperatures up to about 1500 °C. Substrate surfaces can be heat treated, ion-beam sputter cleaned, and chemically characterized in situ by Auger electron spectroscopy prior to deposition and/or bonding. Bicrystals can be synthesized by bonding two single-crystal substrates at a specified orientation. Interfacial layers can be deposited by electron beam evaporation and/or sputter deposition in any layered or alloyed combination on the substrates before bonding. The instrument can accommodate cylindrical and/or wafer type specimens whose sizes are sufficient for fracture mechanical testing to measure interface bond strength. A variety of planar interfaces of metals, semiconductors, and ceramics were synthesized. Examples of bonded stainless steel/Ti/stainless steel, Si/Si, and sapphire/sapphire interfaces are presented.
AB - An ultrahigh vacuum (UHV) diffusion bonding/deposition instrument was designed and constructed, which can produce homophase and heterophase planar interfaces from a wide array of materials. The interfaces are synthesized in situ by diffusion bonding of two substrates with or without various interfacial layers, at temperatures up to about 1500 °C. Substrate surfaces can be heat treated, ion-beam sputter cleaned, and chemically characterized in situ by Auger electron spectroscopy prior to deposition and/or bonding. Bicrystals can be synthesized by bonding two single-crystal substrates at a specified orientation. Interfacial layers can be deposited by electron beam evaporation and/or sputter deposition in any layered or alloyed combination on the substrates before bonding. The instrument can accommodate cylindrical and/or wafer type specimens whose sizes are sufficient for fracture mechanical testing to measure interface bond strength. A variety of planar interfaces of metals, semiconductors, and ceramics were synthesized. Examples of bonded stainless steel/Ti/stainless steel, Si/Si, and sapphire/sapphire interfaces are presented.
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U2 - 10.1557/JMR.2000.0144
DO - 10.1557/JMR.2000.0144
M3 - Article
AN - SCOPUS:0034174602
SN - 0884-2914
VL - 15
SP - 1008
EP - 1016
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 4
ER -