Confinement Effects on Radiation Response of SOI FinFETs at the Scaling Limit

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2 Scopus citations

Abstract

This letter demonstrates the impact of carrier confinement on the radiation response of Si-based SOI finFETS toward the scaling limit. A comparison between the semi-classical and quantum (i.e., self-consistent Schrödinger-Poisson) calculations establishes the significance of confinement effects in determining the experimentally observed radiation response as fin width is scaled to a few nanometers. This letter reveals that reduction in ionizing radiation sensitivity as a function of scaling is not only due to improved electrostatic control, but also due to reduced oxide fields resulting from size quantization and carrier confinement inside the channel of the device.

Original languageEnglish (US)
Article number7837592
Pages (from-to)306-309
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number3
DOIs
StatePublished - Mar 2017
Externally publishedYes

Keywords

  • Confinement
  • finFET
  • poisson
  • quantum
  • radiation
  • scaling
  • Schrödinger
  • SOI

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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