Conductance of polymer nanowires fabricated by a combined electrodeposition and mechanical break junction method

H. X. He, C. Z. Li, Nongjian Tao

Research output: Contribution to journalArticle

137 Citations (Scopus)

Abstract

We electrochemically deposit conducting polymer to bridge two closely placed electrodes, and then form a polymer nanowire by stretching the polymer bridge with the electrodes. During stretching, the conductance increases initially as the polymer chains are aligned in parallel, and then decreases in a stepwise fashion, due to abrupt changes in the nanowire thickness. We study the current-voltage (I-V) characteristics of the nanowire as a function of its electrochemical potential in an analogous fashion to the control of the gate voltage in semiconductor devices. Depending on the potential, the I- V curves vary from ohmic to rectifying characteristics.

Original languageEnglish (US)
Pages (from-to)811-813
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number6
DOIs
StatePublished - Feb 5 2001
Externally publishedYes

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electrodeposition
nanowires
polymers
electrodes
conducting polymers
electric potential
semiconductor devices
deposits
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Conductance of polymer nanowires fabricated by a combined electrodeposition and mechanical break junction method. / He, H. X.; Li, C. Z.; Tao, Nongjian.

In: Applied Physics Letters, Vol. 78, No. 6, 05.02.2001, p. 811-813.

Research output: Contribution to journalArticle

@article{8100671d1471433d8249064cdcc43295,
title = "Conductance of polymer nanowires fabricated by a combined electrodeposition and mechanical break junction method",
abstract = "We electrochemically deposit conducting polymer to bridge two closely placed electrodes, and then form a polymer nanowire by stretching the polymer bridge with the electrodes. During stretching, the conductance increases initially as the polymer chains are aligned in parallel, and then decreases in a stepwise fashion, due to abrupt changes in the nanowire thickness. We study the current-voltage (I-V) characteristics of the nanowire as a function of its electrochemical potential in an analogous fashion to the control of the gate voltage in semiconductor devices. Depending on the potential, the I- V curves vary from ohmic to rectifying characteristics.",
author = "He, {H. X.} and Li, {C. Z.} and Nongjian Tao",
year = "2001",
month = "2",
day = "5",
doi = "10.1063/1.1335551",
language = "English (US)",
volume = "78",
pages = "811--813",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Conductance of polymer nanowires fabricated by a combined electrodeposition and mechanical break junction method

AU - He, H. X.

AU - Li, C. Z.

AU - Tao, Nongjian

PY - 2001/2/5

Y1 - 2001/2/5

N2 - We electrochemically deposit conducting polymer to bridge two closely placed electrodes, and then form a polymer nanowire by stretching the polymer bridge with the electrodes. During stretching, the conductance increases initially as the polymer chains are aligned in parallel, and then decreases in a stepwise fashion, due to abrupt changes in the nanowire thickness. We study the current-voltage (I-V) characteristics of the nanowire as a function of its electrochemical potential in an analogous fashion to the control of the gate voltage in semiconductor devices. Depending on the potential, the I- V curves vary from ohmic to rectifying characteristics.

AB - We electrochemically deposit conducting polymer to bridge two closely placed electrodes, and then form a polymer nanowire by stretching the polymer bridge with the electrodes. During stretching, the conductance increases initially as the polymer chains are aligned in parallel, and then decreases in a stepwise fashion, due to abrupt changes in the nanowire thickness. We study the current-voltage (I-V) characteristics of the nanowire as a function of its electrochemical potential in an analogous fashion to the control of the gate voltage in semiconductor devices. Depending on the potential, the I- V curves vary from ohmic to rectifying characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0001351195&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001351195&partnerID=8YFLogxK

U2 - 10.1063/1.1335551

DO - 10.1063/1.1335551

M3 - Article

AN - SCOPUS:0001351195

VL - 78

SP - 811

EP - 813

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -