Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection

Clemens Heitzinger, Gerhard Klimeck

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

In recent years dna-sensors, and generally biosensors, with semiconducting transducers were fabricated and characterized. Although the concept of so-called BioFETs was proposed already two decades ago, its realization has become feasible only recently due to advances in process technology. In this paper a comprehensive and rigorous approach to the simulation of silicon-nanowire DNAFETS at the feature-scale is presented. It allows to investigate the feasibility of single-molecule detectors and is used to elucidate the performance that can be expected from sensors with nanowire diameters in the deca-nanometer range. Finally the computational challenges for the simulation of silicon-nanowire dna-sensors are discussed.

Original languageEnglish (US)
Pages (from-to)387-390
Number of pages4
JournalJournal of Computational Electronics
Volume6
Issue number1-3
DOIs
StatePublished - Sep 2007

Keywords

  • BioFET
  • DNAFET
  • Silicon-nanowire
  • Simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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