COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP.

J. F. Wager, D. L. Ellsworth, S. M. Goodnick, C. W. Wilmsen

Research output: Contribution to journalConference article

55 Scopus citations

Abstract

The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.

Original languageEnglish (US)
Pages (from-to)513-518
Number of pages6
JournalJournal of vacuum science & technology
Volume19
Issue number3
DOIs
StatePublished - Jan 1 1981
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA
Duration: Jan 27 1981Jan 29 1981

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this