COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP.

J. F. Wager; D. L. Ellsworth; S. M. Goodnick; C. W. Wilmsen

doi:10.1116/1.571049

COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP.

J. F. Wager, D. L. Ellsworth, S. M. Goodnick, C. W. Wilmsen

Research output: Contribution to journal › Conference article › peer-review

64 Scopus citations

Abstract

The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.

Original language	English (US)
Pages (from-to)	513-518
Number of pages	6
Journal	Journal of vacuum science & technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.571049
State	Published - Jan 1 1981
Externally published	Yes
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: Jan 27 1981 → Jan 29 1981

ASJC Scopus subject areas

General Engineering

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10.1116/1.571049

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@article{4e3ebd301aa241cd97d8176f8fac5f6c,

title = "COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP.",

abstract = "The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.",

author = "Wager, {J. F.} and Ellsworth, {D. L.} and Goodnick, {S. M.} and Wilmsen, {C. W.}",

year = "1981",

month = jan,

day = "1",

doi = "10.1116/1.571049",

language = "English (US)",

volume = "19",

pages = "513--518",

journal = "Journal of vacuum science & technology",

issn = "0022-5355",

publisher = "American Institute of Physics Publising LLC",

number = "3",

note = "Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th ; Conference date: 27-01-1981 Through 29-01-1981",

}

TY - JOUR

T1 - COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP.

AU - Wager, J. F.

AU - Ellsworth, D. L.

AU - Goodnick, S. M.

AU - Wilmsen, C. W.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.

AB - The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.

UR - http://www.scopus.com/inward/record.url?scp=0019612570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019612570&partnerID=8YFLogxK

U2 - 10.1116/1.571049

DO - 10.1116/1.571049

M3 - Conference article

AN - SCOPUS:0019612570

SN - 0022-5355

VL - 19

SP - 513

EP - 518

JO - Journal of vacuum science & technology

JF - Journal of vacuum science & technology

IS - 3

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th

Y2 - 27 January 1981 through 29 January 1981

ER -

COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP.

Abstract

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