COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP.

J. F. Wager, D. L. Ellsworth, Stephen Goodnick, C. W. Wilmsen

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.

Original languageEnglish (US)
Pages (from-to)513-518
Number of pages6
JournalJournal of vacuum science & technology
Volume19
Issue number3
DOIs
StatePublished - Sep 1981
Externally publishedYes

Fingerprint

Thermodynamic stability
Oxides
Phosphates
Chemical analysis
Bromine
Film growth
Water vapor
Methanol
X ray photoelectron spectroscopy
Heat treatment
Hydrogen
Air
Water

ASJC Scopus subject areas

  • Engineering(all)

Cite this

COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP. / Wager, J. F.; Ellsworth, D. L.; Goodnick, Stephen; Wilmsen, C. W.

In: Journal of vacuum science & technology, Vol. 19, No. 3, 09.1981, p. 513-518.

Research output: Contribution to journalArticle

Wager, J. F. ; Ellsworth, D. L. ; Goodnick, Stephen ; Wilmsen, C. W. / COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP. In: Journal of vacuum science & technology. 1981 ; Vol. 19, No. 3. pp. 513-518.
@article{4e3ebd301aa241cd97d8176f8fac5f6c,
title = "COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP.",
abstract = "The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.",
author = "Wager, {J. F.} and Ellsworth, {D. L.} and Stephen Goodnick and Wilmsen, {C. W.}",
year = "1981",
month = "9",
doi = "10.1116/1.571049",
language = "English (US)",
volume = "19",
pages = "513--518",
journal = "Journal of Vacuum Science and Technology",
issn = "0022-5355",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP.

AU - Wager, J. F.

AU - Ellsworth, D. L.

AU - Goodnick, Stephen

AU - Wilmsen, C. W.

PY - 1981/9

Y1 - 1981/9

N2 - The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.

AB - The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.

UR - http://www.scopus.com/inward/record.url?scp=0019612570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019612570&partnerID=8YFLogxK

U2 - 10.1116/1.571049

DO - 10.1116/1.571049

M3 - Article

AN - SCOPUS:0019612570

VL - 19

SP - 513

EP - 518

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

SN - 0022-5355

IS - 3

ER -