The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ″as etched″ condition and after in situ heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (approximately 5 and 15 A, respectively). The as etched surface appears to be composed primarily of In//2O//3 with a small concentration of a phosphate compound, presumably either InPO//4 or H//3PO//4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d//5/////2 peak at 445. 6 ev, indicates either InPO//4 or In(OH)//3.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1981|
|Event||Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA|
Duration: Jan 27 1981 → Jan 29 1981
ASJC Scopus subject areas