Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine

J. Kouvetakis; V. V. Patel; C. W. Miller; D. B. Beach

doi:10.1116/1.576423

Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine

J. Kouvetakis, V. V. Patel, C. W. Miller, D. B. Beach

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The composition and structure of boron nitride films prepared by thermal and plasma enhanced chemical vapor deposition (CVD) using borazine as a precursor have been studied. Thermal CVD at temperatures between 475 and 550 °C using either a hot-wall or cold-wall reactor results in amorphous boron-rich films of approximate composition BN₀. ₆₇. Plasma enhanced CVD consistently gives films of 1:1 boron to nitrogen stoichiometry, but the hydrogen content of films deposited below 300 °C is so high that the films react with atmospheric moisture. Optimum conditions for the growth of stoichiometric BN with relatively low hydrogen content were found to be low plasma power, hydrogen-borazine gas mixtures, and a substrate temperature of 550 °C. Films deposited under these conditions are mixtures of poorly crystalline hexagonal and cubic boron nitride.

Original language	English (US)
Pages (from-to)	3929-3933
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	8
Issue number	6
DOIs	https://doi.org/10.1116/1.576423
State	Published - Nov 1990
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.576423

Cite this

@article{0f0ab09254dd44b78a137ae3d3917814,

title = "Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine",

abstract = "The composition and structure of boron nitride films prepared by thermal and plasma enhanced chemical vapor deposition (CVD) using borazine as a precursor have been studied. Thermal CVD at temperatures between 475 and 550 °C using either a hot-wall or cold-wall reactor results in amorphous boron-rich films of approximate composition BN0. 67. Plasma enhanced CVD consistently gives films of 1:1 boron to nitrogen stoichiometry, but the hydrogen content of films deposited below 300 °C is so high that the films react with atmospheric moisture. Optimum conditions for the growth of stoichiometric BN with relatively low hydrogen content were found to be low plasma power, hydrogen-borazine gas mixtures, and a substrate temperature of 550 °C. Films deposited under these conditions are mixtures of poorly crystalline hexagonal and cubic boron nitride.",

author = "J. Kouvetakis and Patel, {V. V.} and Miller, {C. W.} and Beach, {D. B.}",

year = "1990",

month = nov,

doi = "10.1116/1.576423",

language = "English (US)",

volume = "8",

pages = "3929--3933",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine

AU - Kouvetakis, J.

AU - Patel, V. V.

AU - Miller, C. W.

AU - Beach, D. B.

PY - 1990/11

Y1 - 1990/11

N2 - The composition and structure of boron nitride films prepared by thermal and plasma enhanced chemical vapor deposition (CVD) using borazine as a precursor have been studied. Thermal CVD at temperatures between 475 and 550 °C using either a hot-wall or cold-wall reactor results in amorphous boron-rich films of approximate composition BN0. 67. Plasma enhanced CVD consistently gives films of 1:1 boron to nitrogen stoichiometry, but the hydrogen content of films deposited below 300 °C is so high that the films react with atmospheric moisture. Optimum conditions for the growth of stoichiometric BN with relatively low hydrogen content were found to be low plasma power, hydrogen-borazine gas mixtures, and a substrate temperature of 550 °C. Films deposited under these conditions are mixtures of poorly crystalline hexagonal and cubic boron nitride.

AB - The composition and structure of boron nitride films prepared by thermal and plasma enhanced chemical vapor deposition (CVD) using borazine as a precursor have been studied. Thermal CVD at temperatures between 475 and 550 °C using either a hot-wall or cold-wall reactor results in amorphous boron-rich films of approximate composition BN0. 67. Plasma enhanced CVD consistently gives films of 1:1 boron to nitrogen stoichiometry, but the hydrogen content of films deposited below 300 °C is so high that the films react with atmospheric moisture. Optimum conditions for the growth of stoichiometric BN with relatively low hydrogen content were found to be low plasma power, hydrogen-borazine gas mixtures, and a substrate temperature of 550 °C. Films deposited under these conditions are mixtures of poorly crystalline hexagonal and cubic boron nitride.

UR - http://www.scopus.com/inward/record.url?scp=84953679203&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84953679203&partnerID=8YFLogxK

U2 - 10.1116/1.576423

DO - 10.1116/1.576423

M3 - Article

AN - SCOPUS:84953679203

SN - 0734-2101

VL - 8

SP - 3929

EP - 3933

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 6

ER -

Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this