Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine

John Kouvetakis, V. V. Patel, C. W. Miller, D. B. Beach

Research output: Contribution to journalArticle

42 Scopus citations

Abstract

The composition and structure of boron nitride films prepared by thermal and plasma enhanced chemical vapor deposition (CVD) using borazine as a precursor have been studied. Thermal CVD at temperatures between 475 and 550 °C using either a hot-wall or cold-wall reactor results in amorphous boron-rich films of approximate composition BN0. 67. Plasma enhanced CVD consistently gives films of 1:1 boron to nitrogen stoichiometry, but the hydrogen content of films deposited below 300 °C is so high that the films react with atmospheric moisture. Optimum conditions for the growth of stoichiometric BN with relatively low hydrogen content were found to be low plasma power, hydrogen-borazine gas mixtures, and a substrate temperature of 550 °C. Films deposited under these conditions are mixtures of poorly crystalline hexagonal and cubic boron nitride.

Original languageEnglish (US)
Pages (from-to)3929-3933
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume8
Issue number6
DOIs
StatePublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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