We describe the compliant behavior of Ge 1-ySn y buffer layers grown strain-free on Si(100). Deposition of lattice-mismatched epilayers on these buffers introduces significant strains in both systems. G 1-x-y′, Si xSn y′ and Ge 1-xSi x alloys are deposited on these buffers via reactions of designer hydrides to quantify these strains in detail. X-ray analysis reveals that. Ge 1-x-y′/Ge 1-ySny′/Ge 1-y Sn y and Ge 1-xSi x/Ge 1-ySn y bilayers adopt strain states which minimize their combined elastic energy, as if the films were decoupled from the substrate. Compliant Ge 1-ySn y buffers thereby enable growth of highly mismatched Ge-rich semiconductors on Si and thus facilitate the long-sought on-chip integration of micro- and optoelectronic functions.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)