Complementary N- and P-channel Schottky Junction Transistors

Trevor Thornton (Inventor)

Research output: Patent

Abstract

Micropower circuits based on sub-threshold (i.e. weakly inverted) MOSFETs use complementary n- and p-channel transistors in the same CMOS ciruits. Complementary behavior means that if equal and opposite voltages are applied to the p-channel device compared to those on the n-channel device than equal and opposite currents will flow. To achive complementary behaviorin a conventional CMOS circuit the width of the p-channel device has to be 2-3 times larger than that of the n-channel device. This is due to the lower mobility of holes compared to electrons. As a result the p-channel device teks up more space on the chip than the n-channel device. As well as consuming costly silicon 'real estate' the p-channel device is slower becasue of its larger input capacitance.This disclosure explains how micropower circuits can be fabricated using the Schottky Junction Transistor approach taught in 99-038. In particular the circuits can use complementary n- and p-channel SJTs that have substantially equal gate length and gate width. Thgis provides a substantial saving in the total area of an integrated circuit. It alos allows a complementary SJT circuit to operate faster than a similar design using conventional CMOS, because of the reduced capacitance of the p-channel SJTs.
Original languageEnglish (US)
StatePublished - Mar 12 2002

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Transistors
Networks (circuits)
Capacitance
Integrated circuits
Silicon
Electrons
Electric potential

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title = "Complementary N- and P-channel Schottky Junction Transistors",
abstract = "Micropower circuits based on sub-threshold (i.e. weakly inverted) MOSFETs use complementary n- and p-channel transistors in the same CMOS ciruits. Complementary behavior means that if equal and opposite voltages are applied to the p-channel device compared to those on the n-channel device than equal and opposite currents will flow. To achive complementary behaviorin a conventional CMOS circuit the width of the p-channel device has to be 2-3 times larger than that of the n-channel device. This is due to the lower mobility of holes compared to electrons. As a result the p-channel device teks up more space on the chip than the n-channel device. As well as consuming costly silicon 'real estate' the p-channel device is slower becasue of its larger input capacitance.This disclosure explains how micropower circuits can be fabricated using the Schottky Junction Transistor approach taught in 99-038. In particular the circuits can use complementary n- and p-channel SJTs that have substantially equal gate length and gate width. Thgis provides a substantial saving in the total area of an integrated circuit. It alos allows a complementary SJT circuit to operate faster than a similar design using conventional CMOS, because of the reduced capacitance of the p-channel SJTs.",
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N2 - Micropower circuits based on sub-threshold (i.e. weakly inverted) MOSFETs use complementary n- and p-channel transistors in the same CMOS ciruits. Complementary behavior means that if equal and opposite voltages are applied to the p-channel device compared to those on the n-channel device than equal and opposite currents will flow. To achive complementary behaviorin a conventional CMOS circuit the width of the p-channel device has to be 2-3 times larger than that of the n-channel device. This is due to the lower mobility of holes compared to electrons. As a result the p-channel device teks up more space on the chip than the n-channel device. As well as consuming costly silicon 'real estate' the p-channel device is slower becasue of its larger input capacitance.This disclosure explains how micropower circuits can be fabricated using the Schottky Junction Transistor approach taught in 99-038. In particular the circuits can use complementary n- and p-channel SJTs that have substantially equal gate length and gate width. Thgis provides a substantial saving in the total area of an integrated circuit. It alos allows a complementary SJT circuit to operate faster than a similar design using conventional CMOS, because of the reduced capacitance of the p-channel SJTs.

AB - Micropower circuits based on sub-threshold (i.e. weakly inverted) MOSFETs use complementary n- and p-channel transistors in the same CMOS ciruits. Complementary behavior means that if equal and opposite voltages are applied to the p-channel device compared to those on the n-channel device than equal and opposite currents will flow. To achive complementary behaviorin a conventional CMOS circuit the width of the p-channel device has to be 2-3 times larger than that of the n-channel device. This is due to the lower mobility of holes compared to electrons. As a result the p-channel device teks up more space on the chip than the n-channel device. As well as consuming costly silicon 'real estate' the p-channel device is slower becasue of its larger input capacitance.This disclosure explains how micropower circuits can be fabricated using the Schottky Junction Transistor approach taught in 99-038. In particular the circuits can use complementary n- and p-channel SJTs that have substantially equal gate length and gate width. Thgis provides a substantial saving in the total area of an integrated circuit. It alos allows a complementary SJT circuit to operate faster than a similar design using conventional CMOS, because of the reduced capacitance of the p-channel SJTs.

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