Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

Lin Zhou, D. F. Storm, D. S. Katzer, D. J. Meyer, David Smith

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Several N-polar GaN/AlGaN/GaN heterostructures intended for high electron mobility transistor (HEMT) devices were grown by molecular beam epitaxy using either SiC or freestanding GaN substrates. The microstructure of these heterostructures has been compared using transmission electron microscopy and associated analytical techniques. Considerable 1:1 ordering was observed within the Al xGa 1-xN layers (where x∼0.34-0.37) for both substrate types. Threading dislocations were the most common defects observed in structures grown on SiC substrates, whereas interfacial misfit dislocations and surface pits were the primary defects observed in samples grown on the freestanding GaN substrates.

Original languageEnglish (US)
Pages (from-to)25-29
Number of pages5
JournalJournal of Crystal Growth
Volume357
Issue number1
DOIs
StatePublished - Oct 15 2012

Keywords

  • A1. Characterization
  • A3. Molecular beam epitaxy
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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