Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

J. Chan, T. Fu, N. W. Cheung, J. Ross, Nathan Newman, M. Rubin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770°C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850°C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsK.S. Jones, S.J. Pearton, H. Kanber
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages435-440
Number of pages6
Volume300
ISBN (Print)1558991964
StatePublished - 1993
Externally publishedYes
EventMaterials Research Society Spring Meeting - San Francisco, CA, USA
Duration: Apr 12 1993Apr 15 1993

Other

OtherMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA
Period4/12/934/15/93

Fingerprint

Aluminum nitride
Molecular beam epitaxy
Magnetron sputtering
Ions
Substrates
Nitrogen plasma
Light absorption
Crystalline materials
Degradation
Thin films
Temperature
aluminum nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chan, J., Fu, T., Cheung, N. W., Ross, J., Newman, N., & Rubin, M. (1993). Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy. In K. S. Jones, S. J. Pearton, & H. Kanber (Eds.), Materials Research Society Symposium Proceedings (Vol. 300, pp. 435-440). Pittsburgh, PA, United States: Publ by Materials Research Society.

Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy. / Chan, J.; Fu, T.; Cheung, N. W.; Ross, J.; Newman, Nathan; Rubin, M.

Materials Research Society Symposium Proceedings. ed. / K.S. Jones; S.J. Pearton; H. Kanber. Vol. 300 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 435-440.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chan, J, Fu, T, Cheung, NW, Ross, J, Newman, N & Rubin, M 1993, Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy. in KS Jones, SJ Pearton & H Kanber (eds), Materials Research Society Symposium Proceedings. vol. 300, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 435-440, Materials Research Society Spring Meeting, San Francisco, CA, USA, 4/12/93.
Chan J, Fu T, Cheung NW, Ross J, Newman N, Rubin M. Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy. In Jones KS, Pearton SJ, Kanber H, editors, Materials Research Society Symposium Proceedings. Vol. 300. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 435-440
Chan, J. ; Fu, T. ; Cheung, N. W. ; Ross, J. ; Newman, Nathan ; Rubin, M. / Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy. Materials Research Society Symposium Proceedings. editor / K.S. Jones ; S.J. Pearton ; H. Kanber. Vol. 300 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 435-440
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