Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

J. Chan, T. Fu, N. W. Cheung, J. Ross, N. Newman, M. Rubin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770°C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850°C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

Original languageEnglish (US)
Title of host publicationIII-V Electronic and Photonic Device Fabrication and Performance
EditorsK.S. Jones, S.J. Pearton, H. Kanber
PublisherPubl by Materials Research Society
Pages435-440
Number of pages6
ISBN (Print)1558991964
StatePublished - Dec 1 1993
EventMaterials Research Society Spring Meeting - San Francisco, CA, USA
Duration: Apr 12 1993Apr 15 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume300
ISSN (Print)0272-9172

Other

OtherMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA
Period4/12/934/15/93

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chan, J., Fu, T., Cheung, N. W., Ross, J., Newman, N., & Rubin, M. (1993). Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy. In K. S. Jones, S. J. Pearton, & H. Kanber (Eds.), III-V Electronic and Photonic Device Fabrication and Performance (pp. 435-440). (Materials Research Society Symposium Proceedings; Vol. 300). Publ by Materials Research Society.