Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

J. Chan; T. Fu; N. W. Cheung; J. Ross; N. Newman; M. Rubin

doi:10.1557/proc-300-435

Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

J. Chan, T. Fu, N. W. Cheung, J. Ross, N. Newman, M. Rubin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770°C, while the crystallinity of AlN/(0001) Al₂O₃ samples improved from 700 to 850°C. The optical absorption characteristics of the AlN/(0001) Al₂O₃ films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

Original language	English (US)
Title of host publication	III-V Electronic and Photonic Device Fabrication and Performance
Publisher	Publ by Materials Research Society
Pages	435-440
Number of pages	6
ISBN (Print)	1558991964, 9781558991965
DOIs	https://doi.org/10.1557/proc-300-435
State	Published - 1993
Externally published	Yes
Event	Materials Research Society Spring Meeting - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 15 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	300
ISSN (Print)	0272-9172

Other

Other	Materials Research Society Spring Meeting
City	San Francisco, CA, USA
Period	4/12/93 → 4/15/93

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-300-435

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Chan, J., Fu, T., Cheung, N. W., Ross, J., Newman, N., & Rubin, M. (1993). Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy. In III-V Electronic and Photonic Device Fabrication and Performance (pp. 435-440). (Materials Research Society Symposium Proceedings; Vol. 300). Publ by Materials Research Society. https://doi.org/10.1557/proc-300-435

Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy. / Chan, J.; Fu, T.; Cheung, N. W. et al.
III-V Electronic and Photonic Device Fabrication and Performance. Publ by Materials Research Society, 1993. p. 435-440 (Materials Research Society Symposium Proceedings; Vol. 300).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chan, J, Fu, T, Cheung, NW, Ross, J, Newman, N & Rubin, M 1993, Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy. in III-V Electronic and Photonic Device Fabrication and Performance. Materials Research Society Symposium Proceedings, vol. 300, Publ by Materials Research Society, pp. 435-440, Materials Research Society Spring Meeting, San Francisco, CA, USA, 4/12/93. https://doi.org/10.1557/proc-300-435

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abstract = "Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770°C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850°C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.",

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AU - Rubin, M.

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N2 - Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770°C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850°C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

AB - Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770°C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850°C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

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Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

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