Compact modeling of conducting-bridge random-access memory (CBRAM)

Shimeng Yu; H. S.Philip Wong

doi:10.1109/TED.2011.2116120

Compact modeling of conducting-bridge random-access memory (CBRAM)

Shimeng Yu, H. S.Philip Wong

Research output: Contribution to journal › Article › peer-review

212 Scopus citations

Abstract

A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the dependence of ion migration velocity on the electric field, the vertical and lateral growth/dissolution dynamics for the metallic filament are investigated. Both time-dependent transient and quasi-static switching characteristics of the CBRAM are captured. Moreover, the I_V characteristics of the CBRAM can be reproduced. By further considering the compliance effect on the size of the metallic filament, the on-state resistance modulation is fitted, and the multilevel capability is included in the model. This model is verified by the experiments data from the Ag/Ge_0.3Se_0.7-based CBRAM cells. This model reveals that experimentally measured switching parameters such as the threshold voltage and the cell resistance are dynamic quantities that depend on the programming duration time. The time-dependent switching process of the CBRAM is quantified, thus paving the way for a compact SPICE model for circuit simulation.

Original language	English (US)
Article number	5740326
Pages (from-to)	1352-1360
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	5
DOIs	https://doi.org/10.1109/TED.2011.2116120
State	Published - May 2011
Externally published	Yes

Keywords

compact model
conducting-bridge random-access memory (CBRAM)
programmable metallization cell (PMC)
resistive switching
solid-electrolyte memory
voltagetime relationship

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2011.2116120

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@article{37d550fed528427da183fe9f4b17fbfe,

title = "Compact modeling of conducting-bridge random-access memory (CBRAM)",

abstract = "A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the dependence of ion migration velocity on the electric field, the vertical and lateral growth/dissolution dynamics for the metallic filament are investigated. Both time-dependent transient and quasi-static switching characteristics of the CBRAM are captured. Moreover, the IV characteristics of the CBRAM can be reproduced. By further considering the compliance effect on the size of the metallic filament, the on-state resistance modulation is fitted, and the multilevel capability is included in the model. This model is verified by the experiments data from the Ag/Ge0.3Se0.7-based CBRAM cells. This model reveals that experimentally measured switching parameters such as the threshold voltage and the cell resistance are dynamic quantities that depend on the programming duration time. The time-dependent switching process of the CBRAM is quantified, thus paving the way for a compact SPICE model for circuit simulation.",

keywords = "compact model, conducting-bridge random-access memory (CBRAM), programmable metallization cell (PMC), resistive switching, solid-electrolyte memory, voltagetime relationship",

author = "Shimeng Yu and Wong, {H. S.Philip}",

note = "Funding Information: Manuscript received November 29, 2010; revised February 3, 2011; accepted February 5, 2011. Date of publication March 28, 2011; date of current version April 22, 2011. This work is supported in part by the Systems of Neuromorphic Adaptive Plastic Scalable Electronics of the Defense Advanced Research Projects Agency (Defense Sciences Office Program Manager T. Hylton), by the National Science Foundation (NSF) under the NSF Electrical, Communications, and Cyber Systems Project 0950305, by the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) through the NSF/NRI Supplement to the Center for Probing the Nanoscale of the NSF Nanoscale Science and Engineering Center, by the member companies of the Stanford Non-Volatile Memory Technology Research Initiative, and by the C2S2 Focus Center, which is one of six research centers funded under the Focus Center Research Program (FCRP) that is an SRC subsidiary. The work of S. Yu is supported by Stanford Graduate Fellowship. The review of this paper was arranged by Editor V. R. Rao.",

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AU - Wong, H. S.Philip

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PY - 2011/5

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N2 - A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the dependence of ion migration velocity on the electric field, the vertical and lateral growth/dissolution dynamics for the metallic filament are investigated. Both time-dependent transient and quasi-static switching characteristics of the CBRAM are captured. Moreover, the IV characteristics of the CBRAM can be reproduced. By further considering the compliance effect on the size of the metallic filament, the on-state resistance modulation is fitted, and the multilevel capability is included in the model. This model is verified by the experiments data from the Ag/Ge0.3Se0.7-based CBRAM cells. This model reveals that experimentally measured switching parameters such as the threshold voltage and the cell resistance are dynamic quantities that depend on the programming duration time. The time-dependent switching process of the CBRAM is quantified, thus paving the way for a compact SPICE model for circuit simulation.

AB - A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the dependence of ion migration velocity on the electric field, the vertical and lateral growth/dissolution dynamics for the metallic filament are investigated. Both time-dependent transient and quasi-static switching characteristics of the CBRAM are captured. Moreover, the IV characteristics of the CBRAM can be reproduced. By further considering the compliance effect on the size of the metallic filament, the on-state resistance modulation is fitted, and the multilevel capability is included in the model. This model is verified by the experiments data from the Ag/Ge0.3Se0.7-based CBRAM cells. This model reveals that experimentally measured switching parameters such as the threshold voltage and the cell resistance are dynamic quantities that depend on the programming duration time. The time-dependent switching process of the CBRAM is quantified, thus paving the way for a compact SPICE model for circuit simulation.

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KW - solid-electrolyte memory

KW - voltagetime relationship

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Compact modeling of conducting-bridge random-access memory (CBRAM)

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Keywords

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