TY - GEN
T1 - Compact modeling of a PD SOI MESFET for wide temperature designs
AU - Balijepalli, Asha
AU - Ervin, Joseph
AU - Cao, Yu
AU - Thornton, Trevor
PY - 2007/8/28
Y1 - 2007/8/28
N2 - A compact model for the partially-depleted (PD) silicon-on-insulator (SOI) Metal Semiconductor Field Effect Transistor (MESFET) is presented. The absence of a gate-oxide makes the SOI MESFET extremely robust, able to withstand high voltages, and useful for extreme environment electronics. The device has been fabricated using a standard CMOS process. In contrast to SOI MOSFETs and GaAs MESFETs, the source-substrate voltage has a significant impact on the channel current. In this work a model has been developed that includes the effect of the buried-oxide on the performance of the MESFET. The model has been verified for a wide temperature range of -180°C to 150°C. A behavioral model has been included to model the breakdown voltage. The core DC and RF models have been adapted from the commercially available Triquint's Own Model (TOM3) MESFET model. A measurement-based approach is used to develop a 4-terminal device model. The charge-based approach, using S-parameter measurements was used to develop the capacitance model. We also propose a widetemperature compensation technique by source-voltage modulation.
AB - A compact model for the partially-depleted (PD) silicon-on-insulator (SOI) Metal Semiconductor Field Effect Transistor (MESFET) is presented. The absence of a gate-oxide makes the SOI MESFET extremely robust, able to withstand high voltages, and useful for extreme environment electronics. The device has been fabricated using a standard CMOS process. In contrast to SOI MOSFETs and GaAs MESFETs, the source-substrate voltage has a significant impact on the channel current. In this work a model has been developed that includes the effect of the buried-oxide on the performance of the MESFET. The model has been verified for a wide temperature range of -180°C to 150°C. A behavioral model has been included to model the breakdown voltage. The core DC and RF models have been adapted from the commercially available Triquint's Own Model (TOM3) MESFET model. A measurement-based approach is used to develop a 4-terminal device model. The charge-based approach, using S-parameter measurements was used to develop the capacitance model. We also propose a widetemperature compensation technique by source-voltage modulation.
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U2 - 10.1109/ISQED.2007.49
DO - 10.1109/ISQED.2007.49
M3 - Conference contribution
AN - SCOPUS:34548141721
SN - 0769527957
SN - 9780769527956
T3 - Proceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007
SP - 133
EP - 138
BT - Proceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007
T2 - 8th International Symposium on Quality Electronic Design, ISQED 2007
Y2 - 26 March 2007 through 28 March 2007
ER -