A new methodology for circuit level transient simulation of Random Telegraph Noise (RTN) is proposed. The physically based methodology properly models the microscopic phenomena involved in RTN, including their stochastic nature. Using a modified BSIM code, the compact model is implemented in a SPICE simulator, accounting for non-stationary RTN effects under arbitrary bias. The probability of traps to capture or emit charge carriers is updated at each time step of the transient simulation according to the actual bias conditions of the device. Atomistic device simulations are performed in order to study the impact of trap position along the channel on the amplitude of the contribution of a trap to RTN. These device simulations take into account short-range Coulomb interactions and show the relevance of large local deviations of mobility values of carrier electrons, particularly for traps near the source end of the channel. As a case study, jitter in an oscillator is simulated. It is shown that the methodology properly addresses open issues in the literature, by properly accounting for bias-dependent, non-stationary statistic of RTN phenomena relevant to the design of integrated circuits.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering