Compact modeling and simulation of accelerated circuit aging

Devyani Patra, Jiayang Zhang, Runsheng Wang, Mehdi Katoozi, Ethan H. Cannon, Ru Huang, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Accelerated aging becomes progressively pronounced in various circuits, due to the feedback between circuit operation and aging effects, especially HCI. To predict this behavior, the conventional method requires iterative simulations to track the elevated degradation rate, which is expensive in computation. In this paper, a compact model is derived for accelerated aging. By analyzing the underlying mechanism, the new model connects the degradation rate with both reliability physics and circuit topology. It is compatible with circuit simulation, general for design conditions, and efficient in long-term prediction. The new model is validated by silicon data at 65nm, 28nm, and 16/14nm technologies, demonstrating its scalability and effectiveness. Furthermore, it is applied to several benchmark circuits to illustrate the importance of accelerated aging.

Original languageEnglish (US)
Title of host publication2018 IEEE Custom Integrated Circuits Conference, CICC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538624838
DOIs
StatePublished - May 9 2018
Event2018 IEEE Custom Integrated Circuits Conference, CICC 2018 - San Diego, United States
Duration: Apr 8 2018Apr 11 2018

Other

Other2018 IEEE Custom Integrated Circuits Conference, CICC 2018
CountryUnited States
CitySan Diego
Period4/8/184/11/18

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Patra, D., Zhang, J., Wang, R., Katoozi, M., Cannon, E. H., Huang, R., & Cao, Y. (2018). Compact modeling and simulation of accelerated circuit aging. In 2018 IEEE Custom Integrated Circuits Conference, CICC 2018 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CICC.2018.8357063