CMOS-compatible SOI MESFETs with high breakdown voltage

Joseph Ervin; A'Sha Balijepalli; Punarvasu Joshi; Vadim Kushner; Jinman Yang; Trevor Thornton

doi:10.1109/TED.2006.885530

CMOS-compatible SOI MESFETs with high breakdown voltage

Joseph Ervin, A'Sha Balijepalli, Punarvasu Joshi, Vadim Kushner, Jinman Yang, Trevor Thornton

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

The authors demonstrate that silicon-on-insulator (SOI) MESFETs can be fabricated alongside SOI CMOS with no changes to the foundry process flow. The MESFETs operate in depletion mode with a threshold voltage of -0.6 V for a gate length of 0.6 μm. The breakdown voltage of the MESFETs greatly exceeds that of the CMOS devices and varies in the range of 12-58 V depending upon the channel access length, i.e., the distance from the edge of the gate to the edge of the drain region. For MESFETs with a gate length of 0.6 μm and an access length of 0.6 μm, the peak cutoff frequency exceeds 7 GHz. The maximum available gain increases with drain bias and values of f_max range from 17 GHz at Y_DD = 2 V to 22 GHz at V_DD = 8 V.

Original language	English (US)
Pages (from-to)	3129-3134
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	12
DOIs	https://doi.org/10.1109/TED.2006.885530
State	Published - Dec 2006

Keywords

Breakdown voltage
MESFETs
RF power gain
Silicon-on-insulator (SOI)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2006.885530

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title = "CMOS-compatible SOI MESFETs with high breakdown voltage",

abstract = "The authors demonstrate that silicon-on-insulator (SOI) MESFETs can be fabricated alongside SOI CMOS with no changes to the foundry process flow. The MESFETs operate in depletion mode with a threshold voltage of -0.6 V for a gate length of 0.6 μm. The breakdown voltage of the MESFETs greatly exceeds that of the CMOS devices and varies in the range of 12-58 V depending upon the channel access length, i.e., the distance from the edge of the gate to the edge of the drain region. For MESFETs with a gate length of 0.6 μm and an access length of 0.6 μm, the peak cutoff frequency exceeds 7 GHz. The maximum available gain increases with drain bias and values of fmax range from 17 GHz at YDD = 2 V to 22 GHz at VDD = 8 V.",

keywords = "Breakdown voltage, MESFETs, RF power gain, Silicon-on-insulator (SOI)",

author = "Joseph Ervin and A'Sha Balijepalli and Punarvasu Joshi and Vadim Kushner and Jinman Yang and Trevor Thornton",

note = "Funding Information: Manuscript received May 25, 2006; revised August 31, 2006. The work was supported by a contract with the Air Force Research Laboratory and the Defense Advanced Research Projects Agency, and for the Jet Propulsion Laboratory, California Institute of Technology under a contract with the National Aeronautics and Space Administration. The review of this paper was arranged by Editor M. A. Shibib.",

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language = "English (US)",

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AU - Ervin, Joseph

AU - Balijepalli, A'Sha

AU - Joshi, Punarvasu

AU - Kushner, Vadim

AU - Yang, Jinman

AU - Thornton, Trevor

N1 - Funding Information: Manuscript received May 25, 2006; revised August 31, 2006. The work was supported by a contract with the Air Force Research Laboratory and the Defense Advanced Research Projects Agency, and for the Jet Propulsion Laboratory, California Institute of Technology under a contract with the National Aeronautics and Space Administration. The review of this paper was arranged by Editor M. A. Shibib.

PY - 2006/12

Y1 - 2006/12

N2 - The authors demonstrate that silicon-on-insulator (SOI) MESFETs can be fabricated alongside SOI CMOS with no changes to the foundry process flow. The MESFETs operate in depletion mode with a threshold voltage of -0.6 V for a gate length of 0.6 μm. The breakdown voltage of the MESFETs greatly exceeds that of the CMOS devices and varies in the range of 12-58 V depending upon the channel access length, i.e., the distance from the edge of the gate to the edge of the drain region. For MESFETs with a gate length of 0.6 μm and an access length of 0.6 μm, the peak cutoff frequency exceeds 7 GHz. The maximum available gain increases with drain bias and values of fmax range from 17 GHz at YDD = 2 V to 22 GHz at VDD = 8 V.

AB - The authors demonstrate that silicon-on-insulator (SOI) MESFETs can be fabricated alongside SOI CMOS with no changes to the foundry process flow. The MESFETs operate in depletion mode with a threshold voltage of -0.6 V for a gate length of 0.6 μm. The breakdown voltage of the MESFETs greatly exceeds that of the CMOS devices and varies in the range of 12-58 V depending upon the channel access length, i.e., the distance from the edge of the gate to the edge of the drain region. For MESFETs with a gate length of 0.6 μm and an access length of 0.6 μm, the peak cutoff frequency exceeds 7 GHz. The maximum available gain increases with drain bias and values of fmax range from 17 GHz at YDD = 2 V to 22 GHz at VDD = 8 V.

KW - Breakdown voltage

KW - MESFETs

KW - RF power gain

KW - Silicon-on-insulator (SOI)

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CMOS-compatible SOI MESFETs with high breakdown voltage

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Keywords

ASJC Scopus subject areas

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