CMOS-compatible high-voltage complementary LDMOS devices

M. R. Duncan, J. M. Robertson, R. J. Holwill, R. Rodrigues

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The design and implementation of a CMOS-compatible high-voltage process is described. It is shown that small changes can be made in an established n-well process to produce both high-voltage p- and n-channel power LDMOS transistors. These changes do not affect the performance of the low-voltage devices, and result in breakdown voltages of 50 volts for the p-channel, and 120 volts for the n-channel power transistors.

Original languageEnglish (US)
Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
EditorsHeiner Ryssel, Anton Heuberger, Peter Lange
PublisherIEEE Computer Society
Pages535-538
Number of pages4
ISBN (Electronic)0387510001
ISBN (Print)9780387510002
StatePublished - Jan 1 1989
Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
Duration: Sep 11 1989Sep 14 1989

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other19th European Solid State Device Research Conference, ESSDERC 1989
CountryGermany
CityBerlin
Period9/11/899/14/89

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Duncan, M. R., Robertson, J. M., Holwill, R. J., & Rodrigues, R. (1989). CMOS-compatible high-voltage complementary LDMOS devices. In H. Ryssel, A. Heuberger, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 535-538). [5436548] (European Solid-State Device Research Conference). IEEE Computer Society.