CMOS-compatible high-voltage complementary LDMOS devices

M. R. Duncan; J. M. Robertson; R. J. Holwill; R. Rodrigues

doi:10.1007/978-3-642-52314-4_110

CMOS-compatible high-voltage complementary LDMOS devices

M. R. Duncan, J. M. Robertson, R. J. Holwill, R. Rodrigues

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The design and implementation of a CMOS-compatible high-voltage process is described. It is shown that small changes can be made in an established n-well process to produce both high-voltage p- and n-channel power LDMOS transistors. These changes do not affect the performance of the low-voltage devices, and result in breakdown voltages of 50 volts for the p-channel, and 120 volts for the n-channel power transistors.

Original language	English (US)
Title of host publication	ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
Editors	Anton Heuberger, Heiner Ryssel, Peter Lange
Publisher	IEEE Computer Society
Pages	535-538
Number of pages	4
ISBN (Electronic)	0387510001
ISBN (Print)	9780387510002
DOIs	https://doi.org/10.1007/978-3-642-52314-4_110
State	Published - 1989
Externally published	Yes
Event	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: Sep 11 1989 → Sep 14 1989

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	19th European Solid State Device Research Conference, ESSDERC 1989
Country/Territory	Germany
City	Berlin
Period	9/11/89 → 9/14/89

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1007/978-3-642-52314-4_110

Cite this

Duncan, M. R., Robertson, J. M., Holwill, R. J., & Rodrigues, R. (1989). CMOS-compatible high-voltage complementary LDMOS devices. In A. Heuberger, H. Ryssel, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 535-538). Article 5436548 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1007/978-3-642-52314-4_110

CMOS-compatible high-voltage complementary LDMOS devices. / Duncan, M. R.; Robertson, J. M.; Holwill, R. J. et al.
ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. ed. / Anton Heuberger; Heiner Ryssel; Peter Lange. IEEE Computer Society, 1989. p. 535-538 5436548 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Duncan, MR, Robertson, JM, Holwill, RJ & Rodrigues, R 1989, CMOS-compatible high-voltage complementary LDMOS devices. in A Heuberger, H Ryssel & P Lange (eds), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5436548, European Solid-State Device Research Conference, IEEE Computer Society, pp. 535-538, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 9/11/89. https://doi.org/10.1007/978-3-642-52314-4_110

Duncan MR, Robertson JM, Holwill RJ, Rodrigues R. CMOS-compatible high-voltage complementary LDMOS devices. In Heuberger A, Ryssel H, Lange P, editors, ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Computer Society. 1989. p. 535-538. 5436548. (European Solid-State Device Research Conference). doi: 10.1007/978-3-642-52314-4_110

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abstract = "The design and implementation of a CMOS-compatible high-voltage process is described. It is shown that small changes can be made in an established n-well process to produce both high-voltage p- and n-channel power LDMOS transistors. These changes do not affect the performance of the low-voltage devices, and result in breakdown voltages of 50 volts for the p-channel, and 120 volts for the n-channel power transistors.",

author = "Duncan, {M. R.} and Robertson, {J. M.} and Holwill, {R. J.} and R. Rodrigues",

note = "Publisher Copyright: {\textcopyright} 1989 Springer-Verlag Heidelberg. {\textcopyright} 1989 Springer-Verlag Bcrbn Heidelberg. All Rights Reserved.; 19th European Solid State Device Research Conference, ESSDERC 1989 ; Conference date: 11-09-1989 Through 14-09-1989",

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AB - The design and implementation of a CMOS-compatible high-voltage process is described. It is shown that small changes can be made in an established n-well process to produce both high-voltage p- and n-channel power LDMOS transistors. These changes do not affect the performance of the low-voltage devices, and result in breakdown voltages of 50 volts for the p-channel, and 120 volts for the n-channel power transistors.

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CMOS-compatible high-voltage complementary LDMOS devices

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