Cleaning of AlN and GaN surfaces

S. W. King, J. P. Barnak, M. D. Bremser, K. M. Tracy, C. Ronning, R. F. Davis, R. J. Nemanich

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Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been investigated and achieved. Exposure to HF and HCl solutions produced the lowest coverages of oxygen on AlN and GaN surfaces, respectively. However, significant amounts of residual F and Cl were detected. These halogens tie up dangling bonds at the nitride surfaces hindering reoxidation. The desorption of F required temperatures >850°C. Remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450°C, but was not efficient for oxide removal. Annealing GaN in NH3 at 700-800°C produced atomically clean as well as stoichiometric GaN surfaces.

Original languageEnglish (US)
Pages (from-to)5248-5260
Number of pages13
JournalJournal of Applied Physics
Issue number9
StatePublished - Nov 1 1998


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. (1998). Cleaning of AlN and GaN surfaces. Journal of Applied Physics, 84(9), 5248-5260.