Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001

Engineering & Materials Science

• Silicon carbide 96%
• Electric properties 95%
• Annealing 88%
• Titanium 86%
• Thin films 84%
• Photoelectron spectroscopy 76%
• Epitaxial films 67%
• Microstructure 60%
• Surface chemistry 58%
• Electron beams 52%
• Leakage currents 48%
• Transmission electron microscopy 45%
• Evaporation 44%
• X rays 40%
• Temperature 35%
• Electric potential 23%

Chemical Compounds

• Silicon Carbide 100%
• Electrical Property 75%
• Point Group C∞V 71%
• Annealing 70%
• Electron Beam Evaporation 68%
• Schottky Barrier 61%
• Microstructure 60%
• Leakage Current 58%
• Chemistry 52%
• Ambient Reaction Temperature 49%
• Photoelectron Spectroscopy 44%
• Surface Chemistry 40%

Physics & Astronomy

• silicon carbides 86%
• electric contacts 78%
• chemistry 77%
• titanium 74%
• electrical properties 65%
• microstructure 52%
• thin films 46%
• annealing 35%
• room temperature 33%
• x ray spectroscopy 30%
• leakage 24%
• photoelectron spectroscopy 24%
• evaporation 22%
• electron beams 21%
• transmission electron microscopy 19%
• high resolution 18%
• electric potential 16%