Charge déposition modeling of thermal neutron products in fast submicron MOS devices

X. W. Zhu, L. W. Massengill, C. R. Cirba, Hugh Barnaby

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Ground-based thermal neutron reaction products (a, 7Li) appear to be an important terrestrial SEE concern for modern submicron technologies. We address some interesting spatial and temporal characteristics of neutron products. Accurate modeling of the temporal behavior of these products may be required for high-speed devices. In addition, we introduce a simulation methodology that determines device sensitivity to neutron reaction products as a function of neutron nuclear reaction location and the resulting ion track orientation.

Original languageEnglish (US)
Pages (from-to)1378-1385
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume46
Issue number6 PART 1
StatePublished - 1999
Externally publishedYes

Fingerprint

MOS devices
thermal neutrons
Neutrons
neutrons
reaction products
products
Reaction products
programming environments
nuclear reactions
Nuclear reactions
high speed
methodology
Hot Temperature
Ions
ions
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Charge déposition modeling of thermal neutron products in fast submicron MOS devices. / Zhu, X. W.; Massengill, L. W.; Cirba, C. R.; Barnaby, Hugh.

In: IEEE Transactions on Nuclear Science, Vol. 46, No. 6 PART 1, 1999, p. 1378-1385.

Research output: Contribution to journalArticle

Zhu, X. W. ; Massengill, L. W. ; Cirba, C. R. ; Barnaby, Hugh. / Charge déposition modeling of thermal neutron products in fast submicron MOS devices. In: IEEE Transactions on Nuclear Science. 1999 ; Vol. 46, No. 6 PART 1. pp. 1378-1385.
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