Charge déposition modeling of thermal neutron products in fast submicron MOS devices

X. W. Zhu, L. W. Massengill, C. R. Cirba, H. J. Barnaby

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Ground-based thermal neutron reaction products (a, 7Li) appear to be an important terrestrial SEE concern for modern submicron technologies. We address some interesting spatial and temporal characteristics of neutron products. Accurate modeling of the temporal behavior of these products may be required for high-speed devices. In addition, we introduce a simulation methodology that determines device sensitivity to neutron reaction products as a function of neutron nuclear reaction location and the resulting ion track orientation.

Original languageEnglish (US)
Pages (from-to)1378-1385
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume46
Issue number6 PART 1
DOIs
StatePublished - Jan 1 1999
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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