Abstract
PSPI was characterized to determine thermal, mechanical, and morphological properties. It was found to possess excellent thermal stability characterized by a thermal decomposition temperature of 450°C and an average thermal expansion coefficient of 20×10-6/°C. The dielectric constants were 3.0 in the in-plane and 2.6 in the out-of-plane directions.
Original language | English (US) |
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Pages (from-to) | 1253-1258 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 19 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2001 |
Event | 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering