Characterization of thin photosensitive polyimide films for future metallization schemes

Terry Alford, Y. L. Zou, Kaustubh S. Gadre, N. David Theodore, W. Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

PSPI was characterized to determine thermal, mechanical, and morphological properties. It was found to possess excellent thermal stability characterized by a thermal decomposition temperature of 450°C and an average thermal expansion coefficient of 20×10-6/°C. The dielectric constants were 3.0 in the in-plane and 2.6 in the out-of-plane directions.

Original languageEnglish (US)
Pages (from-to)1253-1258
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - Jul 2001

Fingerprint

Metallizing
polyimides
Polyimides
thermal decomposition
Thermal expansion
thermal expansion
Pyrolysis
Thermodynamic stability
Permittivity
thermal stability
thermodynamic properties
mechanical properties
permittivity
coefficients
Temperature
temperature
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of thin photosensitive polyimide films for future metallization schemes. / Alford, Terry; Zou, Y. L.; Gadre, Kaustubh S.; David Theodore, N.; Chen, W.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 4, 07.2001, p. 1253-1258.

Research output: Contribution to journalArticle

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