Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

Shimeng Yu, Yi Wu, Yang Chai, J. Provine, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

HfOx/AlOx bi-layer RRAM devices were fabricated with the atomic layer deposition (ALD) method. Compared with the single-layer HfOx devices, the bi-layer devices showed less variation of the switching voltages and resistances. Inspired by the fact that varying reset stop voltage in a DC sweep can achieve multilevel high resistance state, two equivalent pulse programming schemes were proposed: one linearly increases the reset pulse amplitudes; the other exponentially increases the reset pulse width. The transient current response waveform measurement suggests the former scheme is a more energy efficient programming method.

Original languageEnglish (US)
Title of host publicationInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages106-107
Number of pages2
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China
Duration: Apr 25 2011Apr 27 2011

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan, Province of China
CityHsinchu
Period4/25/114/27/11

Fingerprint

programming
Atomic layer deposition
Electric potential
high resistance
electric potential
pulse amplitude
atomic layer epitaxy
waveforms
pulse duration
direct current
pulses
RRAM
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Yu, S., Wu, Y., Chai, Y., Provine, J., & Wong, H. S. P. (2011). Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices. In International Symposium on VLSI Technology, Systems, and Applications, Proceedings (pp. 106-107). [5872251] https://doi.org/10.1109/VTSA.2011.5872251

Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices. / Yu, Shimeng; Wu, Yi; Chai, Yang; Provine, J.; Wong, H. S Philip.

International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2011. p. 106-107 5872251.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, S, Wu, Y, Chai, Y, Provine, J & Wong, HSP 2011, Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices. in International Symposium on VLSI Technology, Systems, and Applications, Proceedings., 5872251, pp. 106-107, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 4/25/11. https://doi.org/10.1109/VTSA.2011.5872251
Yu S, Wu Y, Chai Y, Provine J, Wong HSP. Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices. In International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2011. p. 106-107. 5872251 https://doi.org/10.1109/VTSA.2011.5872251
Yu, Shimeng ; Wu, Yi ; Chai, Yang ; Provine, J. ; Wong, H. S Philip. / Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices. International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2011. pp. 106-107
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