Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

Shimeng Yu, Yi Wu, Yang Chai, J. Provine, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Scopus citations

Abstract

HfOx/AlOx bi-layer RRAM devices were fabricated with the atomic layer deposition (ALD) method. Compared with the single-layer HfOx devices, the bi-layer devices showed less variation of the switching voltages and resistances. Inspired by the fact that varying reset stop voltage in a DC sweep can achieve multilevel high resistance state, two equivalent pulse programming schemes were proposed: one linearly increases the reset pulse amplitudes; the other exponentially increases the reset pulse width. The transient current response waveform measurement suggests the former scheme is a more energy efficient programming method.

Original languageEnglish (US)
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages106-107
Number of pages2
DOIs
StatePublished - Jul 11 2011
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China
Duration: Apr 25 2011Apr 27 2011

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan, Province of China
CityHsinchu
Period4/25/114/27/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Yu, S., Wu, Y., Chai, Y., Provine, J., & Wong, H. S. P. (2011). Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 106-107). [5872251] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872251