Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

Shimeng Yu; Yi Wu; Yang Chai; J. Provine; H. S.Philip Wong

doi:10.1109/VTSA.2011.5872251

Characterization of switching parameters and multilevel capability in HfO_x/AlO_x bi-layer RRAM devices

Shimeng Yu, Yi Wu, Yang Chai, J. Provine, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

48 Scopus citations

Abstract

HfO_x/AlO_x bi-layer RRAM devices were fabricated with the atomic layer deposition (ALD) method. Compared with the single-layer HfO_x devices, the bi-layer devices showed less variation of the switching voltages and resistances. Inspired by the fact that varying reset stop voltage in a DC sweep can achieve multilevel high resistance state, two equivalent pulse programming schemes were proposed: one linearly increases the reset pulse amplitudes; the other exponentially increases the reset pulse width. The transient current response waveform measurement suggests the former scheme is a more energy efficient programming method.

Original language	English (US)
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	106-107
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2011.5872251
State	Published - 2011
Externally published	Yes
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China Duration: Apr 25 2011 → Apr 27 2011

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/25/11 → 4/27/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/VTSA.2011.5872251

Cite this

Yu, S., Wu, Y., Chai, Y., Provine, J., & Wong, H. S. P. (2011). Characterization of switching parameters and multilevel capability in HfO_x/AlO_x bi-layer RRAM devices. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 106-107). Article 5872251 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872251

Characterization of switching parameters and multilevel capability in HfO_x/AlO_x bi-layer RRAM devices. / Yu, Shimeng; Wu, Yi; Chai, Yang et al.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 106-107 5872251 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yu, S, Wu, Y, Chai, Y, Provine, J & Wong, HSP 2011, Characterization of switching parameters and multilevel capability in HfO_x/AlO_x bi-layer RRAM devices. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872251, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 106-107, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 4/25/11. https://doi.org/10.1109/VTSA.2011.5872251

Yu S, Wu Y, Chai Y, Provine J, Wong HSP. Characterization of switching parameters and multilevel capability in HfO_x/AlO_x bi-layer RRAM devices. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 106-107. 5872251. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872251

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