Characterization of ion implanted GaN

Brian Skromme, G. L. Martinez, L. Krasnobaev, D. B. Poker

Research output: Contribution to journalArticle

Abstract

Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or CGa) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic PN in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to PGa antisite double donors, which are stable in p-type material.

Original languageEnglish (US)
Pages (from-to)G11.39.1-G11.39.6
JournalMaterials Research Society Symposium - Proceedings
Volume639
StatePublished - 2001

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Skromme, B., Martinez, G. L., Krasnobaev, L., & Poker, D. B. (2001). Characterization of ion implanted GaN. Materials Research Society Symposium - Proceedings, 639, G11.39.1-G11.39.6.