Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AIN films

J. D. Hartman, A. M. Roskowski, Z. J. Reitmeier, K. M. Tracy, R. F. Davis, R. J. Nemanich

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films was presented. Atomic force microscopy, optical microscopy, low energy electron diffraction of the etched surface showed a faceted surface morphology with unit cell and half unit cell high steps and a 1×1 reconstruction. Annealing the etched samples under ultrahigh vacuum (UHV) at 1030°C for 15 min resulted in a reduction of the surface oxygen and hydrocarbons below the detection limit of Auger electron spectroscopy.

Original languageEnglish (US)
Pages (from-to)394-400
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number2
DOIs
StatePublished - Mar 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AIN films'. Together they form a unique fingerprint.

  • Cite this