Abstract
Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films was presented. Atomic force microscopy, optical microscopy, low energy electron diffraction of the etched surface showed a faceted surface morphology with unit cell and half unit cell high steps and a 1×1 reconstruction. Annealing the etched samples under ultrahigh vacuum (UHV) at 1030°C for 15 min resulted in a reduction of the surface oxygen and hydrocarbons below the detection limit of Auger electron spectroscopy.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 394-400 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 21 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 2003 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films