Abstract
Group III nitride films were deposited on GaAs and 6H SiC substrates by plasma-enhanced molecular beam epitaxy and characterized by high-resolution electron microscopy. The effect of plasma power during deposition and the influence of substrate orientation on the microstructure was also investigated. Electron transparent specimens were prepared in cross-section by a standard technique, involving mechanical grinding, dimpling and argon ion-milling. Selected area electron diffraction patterns and optical diffractograms were used to determine the structure and lattice constants of the nitride films.
| Original language | English (US) |
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| Title of host publication | Proceedings - Annual Meeting, Microscopy Society of America |
| Editors | G.W. Bailey, A.J. Garratt-Reed |
| Pages | 846-847 |
| Number of pages | 2 |
| State | Published - 1994 |
| Event | Proceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA Duration: Jul 31 1994 → Aug 5 1994 |
Other
| Other | Proceedings of the 52nd Annual Meeting of the Microscopy Society of America |
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| City | New Orleans, LA, USA |
| Period | 7/31/94 → 8/5/94 |
ASJC Scopus subject areas
- General Engineering