Characterization of Group III-nitrides by high-resolution electron microscopy

D. Chandrasekhar, David Smith, S. Strite, M. E. Lin, H. Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Group III nitride films were deposited on GaAs and 6H SiC substrates by plasma-enhanced molecular beam epitaxy and characterized by high-resolution electron microscopy. The effect of plasma power during deposition and the influence of substrate orientation on the microstructure was also investigated. Electron transparent specimens were prepared in cross-section by a standard technique, involving mechanical grinding, dimpling and argon ion-milling. Selected area electron diffraction patterns and optical diffractograms were used to determine the structure and lattice constants of the nitride films.

Original languageEnglish (US)
Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
EditorsG.W. Bailey, A.J. Garratt-Reed
Pages846-847
Number of pages2
StatePublished - 1994
EventProceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA
Duration: Jul 31 1994Aug 5 1994

Other

OtherProceedings of the 52nd Annual Meeting of the Microscopy Society of America
CityNew Orleans, LA, USA
Period7/31/948/5/94

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chandrasekhar, D., Smith, D., Strite, S., Lin, M. E., & Morkoc, H. (1994). Characterization of Group III-nitrides by high-resolution electron microscopy. In G. W. Bailey, & A. J. Garratt-Reed (Eds.), Proceedings - Annual Meeting, Microscopy Society of America (pp. 846-847)