Characterization and modeling of parasitic field-oxide transistors for use in radiation hardening by design

Garrett J. Schlenvogt; Hugh Barnaby; Jeff D. Rollins; Jeff Wilkinson; Scott Morrison; Larry Tyler

doi:10.1109/TNS.2011.2169427

Characterization and modeling of parasitic field-oxide transistors for use in radiation hardening by design

Garrett J. Schlenvogt, Hugh Barnaby, Jeff D. Rollins, Jeff Wilkinson, Scott Morrison, Larry Tyler

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Parasitic field oxide transistors are affected by ionizing radiation, becoming active circuit elements leading to loss of device isolation. Test structures are designed, fabricated and characterized allowing analysis of parasitic device layout geometries. Accurate modeling of parasitic devices through determination of effective width/length ratios supports compact model development for use in radiation-hardening-by-design activities.

Original language	English (US)
Article number	6054044
Pages (from-to)	2863-2870
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	58
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/TNS.2011.2169427
State	Published - Dec 2011

Keywords

Interdevice leakage
local oxidation of silicon (LOCOS)
oxide trapped charge
radiation
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2011.2169427

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title = "Characterization and modeling of parasitic field-oxide transistors for use in radiation hardening by design",

abstract = "Parasitic field oxide transistors are affected by ionizing radiation, becoming active circuit elements leading to loss of device isolation. Test structures are designed, fabricated and characterized allowing analysis of parasitic device layout geometries. Accurate modeling of parasitic devices through determination of effective width/length ratios supports compact model development for use in radiation-hardening-by-design activities.",

keywords = "Interdevice leakage, local oxidation of silicon (LOCOS), oxide trapped charge, radiation, total ionizing dose (TID)",

author = "Schlenvogt, {Garrett J.} and Hugh Barnaby and Rollins, {Jeff D.} and Jeff Wilkinson and Scott Morrison and Larry Tyler",

note = "Funding Information: Manuscript received July 22, 2011; revised September 04, 2011; accepted September 12, 2011. Date of publication October 19, 2011; date of current version December 14, 2011. This work was supported by Medtronic, Inc.",

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T1 - Characterization and modeling of parasitic field-oxide transistors for use in radiation hardening by design

AU - Schlenvogt, Garrett J.

AU - Barnaby, Hugh

AU - Rollins, Jeff D.

AU - Wilkinson, Jeff

AU - Morrison, Scott

AU - Tyler, Larry

N1 - Funding Information: Manuscript received July 22, 2011; revised September 04, 2011; accepted September 12, 2011. Date of publication October 19, 2011; date of current version December 14, 2011. This work was supported by Medtronic, Inc.

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N2 - Parasitic field oxide transistors are affected by ionizing radiation, becoming active circuit elements leading to loss of device isolation. Test structures are designed, fabricated and characterized allowing analysis of parasitic device layout geometries. Accurate modeling of parasitic devices through determination of effective width/length ratios supports compact model development for use in radiation-hardening-by-design activities.

AB - Parasitic field oxide transistors are affected by ionizing radiation, becoming active circuit elements leading to loss of device isolation. Test structures are designed, fabricated and characterized allowing analysis of parasitic device layout geometries. Accurate modeling of parasitic devices through determination of effective width/length ratios supports compact model development for use in radiation-hardening-by-design activities.

KW - Interdevice leakage

KW - local oxidation of silicon (LOCOS)

KW - oxide trapped charge

KW - radiation

KW - total ionizing dose (TID)

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Characterization and modeling of parasitic field-oxide transistors for use in radiation hardening by design

Abstract

Keywords

ASJC Scopus subject areas

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