Characterization and modeling of parasitic field-oxide transistors for use in radiation hardening by design

Garrett J. Schlenvogt, Hugh Barnaby, Jeff D. Rollins, Jeff Wilkinson, Scott Morrison, Larry Tyler

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Parasitic field oxide transistors are affected by ionizing radiation, becoming active circuit elements leading to loss of device isolation. Test structures are designed, fabricated and characterized allowing analysis of parasitic device layout geometries. Accurate modeling of parasitic devices through determination of effective width/length ratios supports compact model development for use in radiation-hardening-by-design activities.

Original languageEnglish (US)
Article number6054044
Pages (from-to)2863-2870
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume58
Issue number6 PART 1
DOIs
StatePublished - Dec 2011

Keywords

  • Interdevice leakage
  • local oxidation of silicon (LOCOS)
  • oxide trapped charge
  • radiation
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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