Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors

K. D. Weeks, S. G. Thomas, P. Dholabhai, James Adams

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

In this work, we demonstrate substitutional phosphorus concentration as high as 12 at.% in epitaxial silicon. It is observed that 10 at.% substitutional phosphorus doping is equivalent in tensile strain to incorporating 2.1 at.% substitutional carbon into the silicon lattice. Phosphorus doping of this order produces tensile strain levels suitable for n-channel metal-oxide semiconductor field-effect transistor uniaxial stressor applications. This work focuses on the experimental and theoretical analyses of phosphorus doped silicon based on high resolution X-ray rocking curves, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and molecular dynamic modeling.

Original languageEnglish (US)
Pages (from-to)3158-3162
Number of pages5
JournalThin Solid Films
Volume520
Issue number8
DOIs
StatePublished - Feb 1 2012

Keywords

  • CVD
  • Epitaxy
  • Silicon doping
  • nMOS stressors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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