Abstract
In this work, we demonstrate substitutional phosphorus concentration as high as 12 at.% in epitaxial silicon. It is observed that 10 at.% substitutional phosphorus doping is equivalent in tensile strain to incorporating 2.1 at.% substitutional carbon into the silicon lattice. Phosphorus doping of this order produces tensile strain levels suitable for n-channel metal-oxide semiconductor field-effect transistor uniaxial stressor applications. This work focuses on the experimental and theoretical analyses of phosphorus doped silicon based on high resolution X-ray rocking curves, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and molecular dynamic modeling.
Original language | English (US) |
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Pages (from-to) | 3158-3162 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 520 |
Issue number | 8 |
DOIs | |
State | Published - Feb 1 2012 |
Keywords
- CVD
- Epitaxy
- Silicon doping
- nMOS stressors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry