Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors

K. D. Weeks, S. G. Thomas, P. Dholabhai, James Adams

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

In this work, we demonstrate substitutional phosphorus concentration as high as 12 at.% in epitaxial silicon. It is observed that 10 at.% substitutional phosphorus doping is equivalent in tensile strain to incorporating 2.1 at.% substitutional carbon into the silicon lattice. Phosphorus doping of this order produces tensile strain levels suitable for n-channel metal-oxide semiconductor field-effect transistor uniaxial stressor applications. This work focuses on the experimental and theoretical analyses of phosphorus doped silicon based on high resolution X-ray rocking curves, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and molecular dynamic modeling.

Original languageEnglish (US)
Pages (from-to)3158-3162
Number of pages5
JournalThin Solid Films
Volume520
Issue number8
DOIs
StatePublished - Feb 1 2012

Fingerprint

Silicon
Phosphorus
phosphorus
Transistors
transistors
Tensile strain
silicon
Doping (additives)
Rutherford backscattering spectroscopy
MOSFET devices
metal oxide semiconductors
Molecular dynamics
backscattering
mass spectroscopy
Carbon
field effect transistors
Spectroscopy
Ions
molecular dynamics
X rays

Keywords

  • CVD
  • Epitaxy
  • nMOS stressors
  • Silicon doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors. / Weeks, K. D.; Thomas, S. G.; Dholabhai, P.; Adams, James.

In: Thin Solid Films, Vol. 520, No. 8, 01.02.2012, p. 3158-3162.

Research output: Contribution to journalArticle

Weeks, K. D. ; Thomas, S. G. ; Dholabhai, P. ; Adams, James. / Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors. In: Thin Solid Films. 2012 ; Vol. 520, No. 8. pp. 3158-3162.
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