Chapman-Enskog expansion and the quantum hydrodynamic model for semiconductor devices

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

A `smooth' quantum hydrodynamic (QHD) model for semiconductor devices is derived by a Chapman-Enskog expansion of the Wigner-Boltzmann equation which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. A dispersive quantum contribution to the heat flux term in the QHD model is introduced.

Original languageEnglish (US)
Pages (from-to)415-435
Number of pages21
JournalVLSI Design
Volume10
Issue number4
StatePublished - 2000

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Semiconductor devices
Hydrodynamics
Boltzmann equation
Potential energy
Heterojunctions
Heat flux

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Chapman-Enskog expansion and the quantum hydrodynamic model for semiconductor devices. / Gardner, Carl; Ringhofer, Christian.

In: VLSI Design, Vol. 10, No. 4, 2000, p. 415-435.

Research output: Contribution to journalArticle

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