Abstract
A `smooth' quantum hydrodynamic (QHD) model for semiconductor devices is derived by a Chapman-Enskog expansion of the Wigner-Boltzmann equation which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. A dispersive quantum contribution to the heat flux term in the QHD model is introduced.
Original language | English (US) |
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Pages (from-to) | 415-435 |
Number of pages | 21 |
Journal | VLSI Design |
Volume | 10 |
Issue number | 4 |
DOIs | |
State | Published - 2000 |
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering