Abstract

We present a combination of spectroscopy and device measurements on GaAsSb/GaAs vertical-cavity surface-emitting laser (VCSEL) structures to determine the temperature at which the wavelength of the VCSEL cavity mode (CM) aligns with that of the quantum well (QW) ground-state transition (GST), and therefore the gain peak. We find that, despite the achievement of room temperature (RT) continuous wave lasing in VCSEL devices, the QW transition and the CM are actually slightly misaligned at this temperature; room temperature electroluminescence measurements from a cleaved edge of the VCSEL wafer indicate that the 300 K QW GST energy is at 0.975 ± 0.005 eV, while the CM measured in the VCSEL surface reflectivity spectra is at 0.9805 ± 0.0002 eV. When the wafer sample is cooled, the CM and QW GST can be brought into alignment at 270 ± 10 K, as confirmed by temperature-dependent electro-modulated reflectance (ER) and edge-electroluminescence spectroscopic studies. This alignment temperature is further confirmed by comparing the temperature dependence of the emission energy of a fabricated VCSEL device with that of an edge-emitting laser structure with a nominally identical active region. The study suggests that for further device improvement, the room temperature CM and QW GST energies should be more closely matched and both designed to a smaller energy of about 0.95 eV, somewhat closer to the 1.31 μm target. The study amply demonstrates the usefulness of non-destructive ER characterisation techniques in VCSEL manufacturing with GaAsSb-based QWs.

Original languageEnglish (US)
Article number033108
JournalJournal of Applied Physics
Volume112
Issue number3
DOIs
StatePublished - Aug 2012

Fingerprint

laser cavities
alignment
surface emitting lasers
cavities
spectroscopy
quantum wells
ground state
reflectance
electroluminescence
room temperature
wafers
temperature
energy
continuous radiation
lasing
manufacturing
temperature dependence

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Blume, G., Hild, K., Marko, I. P., Hosea, T. J. C., Yu, S. Q., Chaparro, S. A., ... Sweeney, S. J. (2012). Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements. Journal of Applied Physics, 112(3), [033108]. https://doi.org/10.1063/1.4744985

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements. / Blume, G.; Hild, K.; Marko, I. P.; Hosea, T. J C; Yu, S. Q.; Chaparro, S. A.; Samal, N.; Johnson, Shane; Zhang, Yong-Hang; Sweeney, S. J.

In: Journal of Applied Physics, Vol. 112, No. 3, 033108, 08.2012.

Research output: Contribution to journalArticle

Blume, G. ; Hild, K. ; Marko, I. P. ; Hosea, T. J C ; Yu, S. Q. ; Chaparro, S. A. ; Samal, N. ; Johnson, Shane ; Zhang, Yong-Hang ; Sweeney, S. J. / Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements. In: Journal of Applied Physics. 2012 ; Vol. 112, No. 3.
@article{2dd88b3919484493aef116d06fa03dcf,
title = "Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements",
abstract = "We present a combination of spectroscopy and device measurements on GaAsSb/GaAs vertical-cavity surface-emitting laser (VCSEL) structures to determine the temperature at which the wavelength of the VCSEL cavity mode (CM) aligns with that of the quantum well (QW) ground-state transition (GST), and therefore the gain peak. We find that, despite the achievement of room temperature (RT) continuous wave lasing in VCSEL devices, the QW transition and the CM are actually slightly misaligned at this temperature; room temperature electroluminescence measurements from a cleaved edge of the VCSEL wafer indicate that the 300 K QW GST energy is at 0.975 ± 0.005 eV, while the CM measured in the VCSEL surface reflectivity spectra is at 0.9805 ± 0.0002 eV. When the wafer sample is cooled, the CM and QW GST can be brought into alignment at 270 ± 10 K, as confirmed by temperature-dependent electro-modulated reflectance (ER) and edge-electroluminescence spectroscopic studies. This alignment temperature is further confirmed by comparing the temperature dependence of the emission energy of a fabricated VCSEL device with that of an edge-emitting laser structure with a nominally identical active region. The study suggests that for further device improvement, the room temperature CM and QW GST energies should be more closely matched and both designed to a smaller energy of about 0.95 eV, somewhat closer to the 1.31 μm target. The study amply demonstrates the usefulness of non-destructive ER characterisation techniques in VCSEL manufacturing with GaAsSb-based QWs.",
author = "G. Blume and K. Hild and Marko, {I. P.} and Hosea, {T. J C} and Yu, {S. Q.} and Chaparro, {S. A.} and N. Samal and Shane Johnson and Yong-Hang Zhang and Sweeney, {S. J.}",
year = "2012",
month = "8",
doi = "10.1063/1.4744985",
language = "English (US)",
volume = "112",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

AU - Blume, G.

AU - Hild, K.

AU - Marko, I. P.

AU - Hosea, T. J C

AU - Yu, S. Q.

AU - Chaparro, S. A.

AU - Samal, N.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

AU - Sweeney, S. J.

PY - 2012/8

Y1 - 2012/8

N2 - We present a combination of spectroscopy and device measurements on GaAsSb/GaAs vertical-cavity surface-emitting laser (VCSEL) structures to determine the temperature at which the wavelength of the VCSEL cavity mode (CM) aligns with that of the quantum well (QW) ground-state transition (GST), and therefore the gain peak. We find that, despite the achievement of room temperature (RT) continuous wave lasing in VCSEL devices, the QW transition and the CM are actually slightly misaligned at this temperature; room temperature electroluminescence measurements from a cleaved edge of the VCSEL wafer indicate that the 300 K QW GST energy is at 0.975 ± 0.005 eV, while the CM measured in the VCSEL surface reflectivity spectra is at 0.9805 ± 0.0002 eV. When the wafer sample is cooled, the CM and QW GST can be brought into alignment at 270 ± 10 K, as confirmed by temperature-dependent electro-modulated reflectance (ER) and edge-electroluminescence spectroscopic studies. This alignment temperature is further confirmed by comparing the temperature dependence of the emission energy of a fabricated VCSEL device with that of an edge-emitting laser structure with a nominally identical active region. The study suggests that for further device improvement, the room temperature CM and QW GST energies should be more closely matched and both designed to a smaller energy of about 0.95 eV, somewhat closer to the 1.31 μm target. The study amply demonstrates the usefulness of non-destructive ER characterisation techniques in VCSEL manufacturing with GaAsSb-based QWs.

AB - We present a combination of spectroscopy and device measurements on GaAsSb/GaAs vertical-cavity surface-emitting laser (VCSEL) structures to determine the temperature at which the wavelength of the VCSEL cavity mode (CM) aligns with that of the quantum well (QW) ground-state transition (GST), and therefore the gain peak. We find that, despite the achievement of room temperature (RT) continuous wave lasing in VCSEL devices, the QW transition and the CM are actually slightly misaligned at this temperature; room temperature electroluminescence measurements from a cleaved edge of the VCSEL wafer indicate that the 300 K QW GST energy is at 0.975 ± 0.005 eV, while the CM measured in the VCSEL surface reflectivity spectra is at 0.9805 ± 0.0002 eV. When the wafer sample is cooled, the CM and QW GST can be brought into alignment at 270 ± 10 K, as confirmed by temperature-dependent electro-modulated reflectance (ER) and edge-electroluminescence spectroscopic studies. This alignment temperature is further confirmed by comparing the temperature dependence of the emission energy of a fabricated VCSEL device with that of an edge-emitting laser structure with a nominally identical active region. The study suggests that for further device improvement, the room temperature CM and QW GST energies should be more closely matched and both designed to a smaller energy of about 0.95 eV, somewhat closer to the 1.31 μm target. The study amply demonstrates the usefulness of non-destructive ER characterisation techniques in VCSEL manufacturing with GaAsSb-based QWs.

UR - http://www.scopus.com/inward/record.url?scp=84865238642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865238642&partnerID=8YFLogxK

U2 - 10.1063/1.4744985

DO - 10.1063/1.4744985

M3 - Article

AN - SCOPUS:84865238642

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033108

ER -