Carrier statistics in graphene at high electric field

D. K. Ferry

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The saturated velocity of a semiconductor is an important measure of performance. Graphene has been of interest for many applications due to its apparently high value of the saturated velocity. Recent experiments have suggested that this value is very density dependent and can even exceed the band limiting Fermi velocity. On the other hand, recent calculations have shown that the saturated velocity is largely independent of the carrier density. Here, we show that the carrier heating, due to high electric fields, can change the carrier statistics. This, and the fact that minority carriers can significantly impact the conductance may lead to erroneous conclusions about the actual total carrier density in the experimental situation.

Original languageEnglish (US)
Article number025018
JournalSemiconductor Science and Technology
Volume32
Issue number2
DOIs
StatePublished - Jan 20 2017

Keywords

  • electron transport
  • nanostructures
  • phonon scattering
  • statistics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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