16 Citations (Scopus)

Abstract

The interface recombination velocities of CdTe/MgxCd1-xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30±10cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

Original languageEnglish (US)
Article number041120
JournalApplied Physics Letters
Volume107
Issue number4
DOIs
StatePublished - Jul 27 2015

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carrier lifetime
molecular beam epitaxy
thermionic emission
escape
aluminum gallium arsenides
photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy. / Liu, Shi; Zhao, Xin Hao; Campbell, Calli M.; Lassise, Maxwell B.; Zhao, Yuan; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 107, No. 4, 041120, 27.07.2015.

Research output: Contribution to journalArticle

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abstract = "The interface recombination velocities of CdTe/MgxCd1-xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30±10cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.",
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T1 - Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

AU - Liu, Shi

AU - Zhao, Xin Hao

AU - Campbell, Calli M.

AU - Lassise, Maxwell B.

AU - Zhao, Yuan

AU - Zhang, Yong-Hang

PY - 2015/7/27

Y1 - 2015/7/27

N2 - The interface recombination velocities of CdTe/MgxCd1-xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30±10cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

AB - The interface recombination velocities of CdTe/MgxCd1-xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30±10cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

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