Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

Shi Liu; Xin Hao Zhao; Calli M. Campbell; Maxwell B. Lassise; Yuan Zhao; Yong-Hang Zhang

doi:10.1063/1.4927757

Carrier lifetimes and interface recombination velocities in CdTe/Mg_xCd_1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

Shi Liu, Xin Hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The interface recombination velocities of CdTe/Mg_xCd_1-_xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30±10cm/s has been measured for the CdTe/Mg_0.46Cd_0.54Te interface, and a longest carrier lifetime of 0.83μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

Original language	English (US)
Article number	041120
Journal	Applied Physics Letters
Volume	107
Issue number	4
DOIs	https://doi.org/10.1063/1.4927757
State	Published - Jul 27 2015

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy",

abstract = "The interface recombination velocities of CdTe/MgxCd1-xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30±10cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.",

author = "Shi Liu and Zhao, {Xin Hao} and Campbell, {Calli M.} and Lassise, {Maxwell B.} and Yuan Zhao and Yong-Hang Zhang",

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T1 - Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

AU - Liu, Shi

AU - Zhao, Xin Hao

AU - Campbell, Calli M.

AU - Lassise, Maxwell B.

AU - Zhao, Yuan

AU - Zhang, Yong-Hang

PY - 2015/7/27

Y1 - 2015/7/27

N2 - The interface recombination velocities of CdTe/MgxCd1-xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30±10cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

AB - The interface recombination velocities of CdTe/MgxCd1-xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30±10cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

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Carrier lifetimes and interface recombination velocities in CdTe/Mg_xCd_1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

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