Bulk GaN and AlGaNGaN heterostructure drift velocity measurements and comparison to theoretical models

J. M. Barker; D. K. Ferry; D. D. Koleske; R. J. Shul

doi:10.1063/1.1854724

Bulk GaN and AlGaNGaN heterostructure drift velocity measurements and comparison to theoretical models

J. M. Barker, D. K. Ferry, D. D. Koleske, R. J. Shul

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

The room-temperature velocity-field characteristics for n -type gallium nitride and AlGaNGaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5× 107 cms at 180 kVcm for the n -type gallium nitride and 3.1× 107 cms at 140 kVcm for the AlGaNGaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.

Original language	English (US)
Article number	063705
Journal	Journal of Applied Physics
Volume	97
Issue number	6
DOIs	https://doi.org/10.1063/1.1854724
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1854724

Cite this

@article{06a7d0eca0614cb5b5f13e89075803b5,

title = "Bulk GaN and AlGaNGaN heterostructure drift velocity measurements and comparison to theoretical models",

abstract = "The room-temperature velocity-field characteristics for n -type gallium nitride and AlGaNGaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5× 107 cms at 180 kVcm for the n -type gallium nitride and 3.1× 107 cms at 140 kVcm for the AlGaNGaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.",

author = "Barker, {J. M.} and Ferry, {D. K.} and Koleske, {D. D.} and Shul, {R. J.}",

note = "Funding Information: This work was supported in part by the Office of Naval Research. One of the authors (J.M.B.) has benefited from a Sandia National Laboratories Fellowship. The authors would like to thank S. M. Goodnick, R. Akis, T. J. Thornton, O. Ambacher, and R. Joshi for many fruitful discussions.",

year = "2005",

doi = "10.1063/1.1854724",

language = "English (US)",

volume = "97",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Bulk GaN and AlGaNGaN heterostructure drift velocity measurements and comparison to theoretical models

AU - Barker, J. M.

AU - Ferry, D. K.

AU - Koleske, D. D.

AU - Shul, R. J.

N1 - Funding Information: This work was supported in part by the Office of Naval Research. One of the authors (J.M.B.) has benefited from a Sandia National Laboratories Fellowship. The authors would like to thank S. M. Goodnick, R. Akis, T. J. Thornton, O. Ambacher, and R. Joshi for many fruitful discussions.

PY - 2005

Y1 - 2005

N2 - The room-temperature velocity-field characteristics for n -type gallium nitride and AlGaNGaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5× 107 cms at 180 kVcm for the n -type gallium nitride and 3.1× 107 cms at 140 kVcm for the AlGaNGaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.

AB - The room-temperature velocity-field characteristics for n -type gallium nitride and AlGaNGaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5× 107 cms at 180 kVcm for the n -type gallium nitride and 3.1× 107 cms at 140 kVcm for the AlGaNGaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.

UR - http://www.scopus.com/inward/record.url?scp=20644455339&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20644455339&partnerID=8YFLogxK

U2 - 10.1063/1.1854724

DO - 10.1063/1.1854724

M3 - Article

AN - SCOPUS:20644455339

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063705

ER -

Bulk GaN and AlGaNGaN heterostructure drift velocity measurements and comparison to theoretical models

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this