Bulk GaN and AlGaNGaN heterostructure drift velocity measurements and comparison to theoretical models

J. M. Barker, D. K. Ferry, D. D. Koleske, R. J. Shul

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The room-temperature velocity-field characteristics for n -type gallium nitride and AlGaNGaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5× 107 cms at 180 kVcm for the n -type gallium nitride and 3.1× 107 cms at 140 kVcm for the AlGaNGaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.

Original languageEnglish (US)
Article number063705
JournalJournal of Applied Physics
Issue number6
StatePublished - Jun 28 2005


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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