BTI-induced aging under random stress waveforms

Modeling, simulation and silicon validation

Ketul Sutaria, Athul Ramkumar, Rongjun Zhu, Renju Rajveev, Yao Ma, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

The BTI effect, which consists of both stress and recovery phases, poses a unique challenge to long-term aging prediction, because the degradation rate strongly depends on the stress pattern. Previous approaches usually resort to an average, constant stress waveform to simplify the situation. They are efficient, but fail to capture the reality, especially under dynamic voltage scaling (DVS) or in ana-log/mixed signal designs where the stress waveform is much more random. This paper presents a suite of solutions that enable aging simulation under all possible stress conditions. Key contributions include: (1) Compact modeling of BTI when the stress voltage is varying. The results to both reaction-diffusion (RD) and trap-ping/detrapping (TD) mechanisms are derived. (2) Efficient simula-tion under DVS, leveraging the new BTI models; (3) Silicon vali-dation at 45nm and 65nm, at both device and circuit levels. As the results illustrate, it is necessary to combine both RD and TD mech-anisms to accurately predict aging under changing stress voltages. Our proposed work provides a general and comprehensive solution to aging analysis under random stress patterns.

Original languageEnglish (US)
Title of host publicationProceedings - Design Automation Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479930173
DOIs
StatePublished - 2014
Event51st Annual Design Automation Conference, DAC 2014 - San Francisco, CA, United States
Duration: Jun 2 2014Jun 5 2014

Other

Other51st Annual Design Automation Conference, DAC 2014
CountryUnited States
CitySan Francisco, CA
Period6/2/146/5/14

Fingerprint

Waveform
Modeling and Simulation
Silicon
Aging of materials
Computer simulation
Dynamic Voltage Scaling
Reaction-diffusion
Trap
Voltage
Simplify
Electric potential
Degradation
Recovery
Predict
Necessary
Prediction
Modeling
Networks (circuits)
Simulation

Keywords

  • Bias Temperature In-stability
  • DVS
  • Random Stress Waveform
  • Reliability Prediction

ASJC Scopus subject areas

  • Computer Science Applications
  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Modeling and Simulation

Cite this

Sutaria, K., Ramkumar, A., Zhu, R., Rajveev, R., Ma, Y., & Cao, Y. (2014). BTI-induced aging under random stress waveforms: Modeling, simulation and silicon validation. In Proceedings - Design Automation Conference [2593101] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1145/2593069.2593101

BTI-induced aging under random stress waveforms : Modeling, simulation and silicon validation. / Sutaria, Ketul; Ramkumar, Athul; Zhu, Rongjun; Rajveev, Renju; Ma, Yao; Cao, Yu.

Proceedings - Design Automation Conference. Institute of Electrical and Electronics Engineers Inc., 2014. 2593101.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sutaria, K, Ramkumar, A, Zhu, R, Rajveev, R, Ma, Y & Cao, Y 2014, BTI-induced aging under random stress waveforms: Modeling, simulation and silicon validation. in Proceedings - Design Automation Conference., 2593101, Institute of Electrical and Electronics Engineers Inc., 51st Annual Design Automation Conference, DAC 2014, San Francisco, CA, United States, 6/2/14. https://doi.org/10.1145/2593069.2593101
Sutaria K, Ramkumar A, Zhu R, Rajveev R, Ma Y, Cao Y. BTI-induced aging under random stress waveforms: Modeling, simulation and silicon validation. In Proceedings - Design Automation Conference. Institute of Electrical and Electronics Engineers Inc. 2014. 2593101 https://doi.org/10.1145/2593069.2593101
Sutaria, Ketul ; Ramkumar, Athul ; Zhu, Rongjun ; Rajveev, Renju ; Ma, Yao ; Cao, Yu. / BTI-induced aging under random stress waveforms : Modeling, simulation and silicon validation. Proceedings - Design Automation Conference. Institute of Electrical and Electronics Engineers Inc., 2014.
@inproceedings{7314afff56744bf79c3f700a58768665,
title = "BTI-induced aging under random stress waveforms: Modeling, simulation and silicon validation",
abstract = "The BTI effect, which consists of both stress and recovery phases, poses a unique challenge to long-term aging prediction, because the degradation rate strongly depends on the stress pattern. Previous approaches usually resort to an average, constant stress waveform to simplify the situation. They are efficient, but fail to capture the reality, especially under dynamic voltage scaling (DVS) or in ana-log/mixed signal designs where the stress waveform is much more random. This paper presents a suite of solutions that enable aging simulation under all possible stress conditions. Key contributions include: (1) Compact modeling of BTI when the stress voltage is varying. The results to both reaction-diffusion (RD) and trap-ping/detrapping (TD) mechanisms are derived. (2) Efficient simula-tion under DVS, leveraging the new BTI models; (3) Silicon vali-dation at 45nm and 65nm, at both device and circuit levels. As the results illustrate, it is necessary to combine both RD and TD mech-anisms to accurately predict aging under changing stress voltages. Our proposed work provides a general and comprehensive solution to aging analysis under random stress patterns.",
keywords = "Bias Temperature In-stability, DVS, Random Stress Waveform, Reliability Prediction",
author = "Ketul Sutaria and Athul Ramkumar and Rongjun Zhu and Renju Rajveev and Yao Ma and Yu Cao",
year = "2014",
doi = "10.1145/2593069.2593101",
language = "English (US)",
isbn = "9781479930173",
booktitle = "Proceedings - Design Automation Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - BTI-induced aging under random stress waveforms

T2 - Modeling, simulation and silicon validation

AU - Sutaria, Ketul

AU - Ramkumar, Athul

AU - Zhu, Rongjun

AU - Rajveev, Renju

AU - Ma, Yao

AU - Cao, Yu

PY - 2014

Y1 - 2014

N2 - The BTI effect, which consists of both stress and recovery phases, poses a unique challenge to long-term aging prediction, because the degradation rate strongly depends on the stress pattern. Previous approaches usually resort to an average, constant stress waveform to simplify the situation. They are efficient, but fail to capture the reality, especially under dynamic voltage scaling (DVS) or in ana-log/mixed signal designs where the stress waveform is much more random. This paper presents a suite of solutions that enable aging simulation under all possible stress conditions. Key contributions include: (1) Compact modeling of BTI when the stress voltage is varying. The results to both reaction-diffusion (RD) and trap-ping/detrapping (TD) mechanisms are derived. (2) Efficient simula-tion under DVS, leveraging the new BTI models; (3) Silicon vali-dation at 45nm and 65nm, at both device and circuit levels. As the results illustrate, it is necessary to combine both RD and TD mech-anisms to accurately predict aging under changing stress voltages. Our proposed work provides a general and comprehensive solution to aging analysis under random stress patterns.

AB - The BTI effect, which consists of both stress and recovery phases, poses a unique challenge to long-term aging prediction, because the degradation rate strongly depends on the stress pattern. Previous approaches usually resort to an average, constant stress waveform to simplify the situation. They are efficient, but fail to capture the reality, especially under dynamic voltage scaling (DVS) or in ana-log/mixed signal designs where the stress waveform is much more random. This paper presents a suite of solutions that enable aging simulation under all possible stress conditions. Key contributions include: (1) Compact modeling of BTI when the stress voltage is varying. The results to both reaction-diffusion (RD) and trap-ping/detrapping (TD) mechanisms are derived. (2) Efficient simula-tion under DVS, leveraging the new BTI models; (3) Silicon vali-dation at 45nm and 65nm, at both device and circuit levels. As the results illustrate, it is necessary to combine both RD and TD mech-anisms to accurately predict aging under changing stress voltages. Our proposed work provides a general and comprehensive solution to aging analysis under random stress patterns.

KW - Bias Temperature In-stability

KW - DVS

KW - Random Stress Waveform

KW - Reliability Prediction

UR - http://www.scopus.com/inward/record.url?scp=84903124430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903124430&partnerID=8YFLogxK

U2 - 10.1145/2593069.2593101

DO - 10.1145/2593069.2593101

M3 - Conference contribution

SN - 9781479930173

BT - Proceedings - Design Automation Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -