Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan H. Liu, Robert O. Grondin, Thomas A. DeMassa, Julian J. Sanchez

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

    Original languageEnglish (US)
    Title of host publicationBiennial University/Government/Industry Microelectronics Symposium - Proceedings
    PublisherIEEE
    Pages78-82
    Number of pages5
    StatePublished - 1997
    EventProceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA
    Duration: Jul 20 1997Jul 23 1997

    Other

    OtherProceedings of the 1997 12th Biennial University/Government/Industry Microelectronics
    CityRochester, NY, USA
    Period7/20/977/23/97

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Media Technology

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  • Cite this

    Liu, C. H., Grondin, R. O., DeMassa, T. A., & Sanchez, J. J. (1997). Breakdown model and lifetime projection for thin gate oxide MOS devices. In Biennial University/Government/Industry Microelectronics Symposium - Proceedings (pp. 78-82). IEEE.