Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan H. Liu; Robert O. Grondin; Thomas A. DeMassa; Julian J. Sanchez

Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan H. Liu, Robert O. Grondin, Thomas A. DeMassa, Julian J. Sanchez

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

Original language	English (US)
Title of host publication	Biennial University/Government/Industry Microelectronics Symposium - Proceedings
Publisher	IEEE
Pages	78-82
Number of pages	5
State	Published - 1997
Event	Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA Duration: Jul 20 1997 → Jul 23 1997

Other

Other	Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics
City	Rochester, NY, USA
Period	7/20/97 → 7/23/97

ASJC Scopus subject areas

Electrical and Electronic Engineering
Media Technology

Cite this

@inproceedings{d56852640f0747b2b9fae087afdb453e,

title = "Breakdown model and lifetime projection for thin gate oxide MOS devices",

abstract = "An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.",

author = "Liu, {Chuan H.} and Grondin, {Robert O.} and DeMassa, {Thomas A.} and Sanchez, {Julian J.}",

year = "1997",

language = "English (US)",

pages = "78--82",

booktitle = "Biennial University/Government/Industry Microelectronics Symposium - Proceedings",

publisher = "IEEE",

note = "Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics ; Conference date: 20-07-1997 Through 23-07-1997",

}

TY - GEN

T1 - Breakdown model and lifetime projection for thin gate oxide MOS devices

AU - Liu, Chuan H.

AU - Grondin, Robert O.

AU - DeMassa, Thomas A.

AU - Sanchez, Julian J.

PY - 1997

Y1 - 1997

N2 - An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

AB - An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

UR - http://www.scopus.com/inward/record.url?scp=0031376920&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031376920&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031376920

SP - 78

EP - 82

BT - Biennial University/Government/Industry Microelectronics Symposium - Proceedings

PB - IEEE

T2 - Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics

Y2 - 20 July 1997 through 23 July 1997

ER -

Breakdown model and lifetime projection for thin gate oxide MOS devices

Abstract

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ASJC Scopus subject areas

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