Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates

J. P. Liu; J. B. Limb; J. H. Ryou; D. Yoo; C. A. Horne; R. D. Dupuis; Z. H. Wu; A. M. Fischer; Fernando Ponce; A. D. Hanser; L. Liu; E. A. Preble; K. R. Evans

doi:10.1063/1.2832645

Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates

J. P. Liu, J. B. Limb, J. H. Ryou, D. Yoo, C. A. Horne, R. D. Dupuis, Z. H. Wu, A. M. Fischer, Fernando Ponce, A. D. Hanser, L. Liu, E. A. Preble, K. R. Evans

Physics

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31 Scopus citations

Abstract

Visible blue light emitting diodes have been produced on freestanding nonpolar GaN (11-20) a -plane substrates by metal-organic chemical vapor deposition. The growth conditions have been optimized for smooth growth morphology of GaN nonpolar homoepitaxial layers without surface features, leading to light emitting diode epitaxial structures that are free of crystalline defects such as threading dislocations and stacking faults. Electroluminescence of light emitting diodes exhibit peak wavelengths of ∼450 nm and are independent of current level at low current densities before the heating effects are evidenced.

Original language	English (US)
Article number	011123
Journal	Applied Physics Letters
Volume	92
Issue number	1
DOIs	https://doi.org/10.1063/1.2832645
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2832645

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@article{cbe6bfcd4be14591ba03efaf907956de,

title = "Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates",

abstract = "Visible blue light emitting diodes have been produced on freestanding nonpolar GaN (11-20) a -plane substrates by metal-organic chemical vapor deposition. The growth conditions have been optimized for smooth growth morphology of GaN nonpolar homoepitaxial layers without surface features, leading to light emitting diode epitaxial structures that are free of crystalline defects such as threading dislocations and stacking faults. Electroluminescence of light emitting diodes exhibit peak wavelengths of ∼450 nm and are independent of current level at low current densities before the heating effects are evidenced.",

author = "Liu, {J. P.} and Limb, {J. B.} and Ryou, {J. H.} and D. Yoo and Horne, {C. A.} and Dupuis, {R. D.} and Wu, {Z. H.} and Fischer, {A. M.} and Fernando Ponce and Hanser, {A. D.} and L. Liu and Preble, {E. A.} and Evans, {K. R.}",

note = "Funding Information: Work at Georgia Tech was supported by the Department of Energy under Contract No. DE-FC26-03NT41946. Work at ASU was supported by a grant from Nichia Corporation. One of the authors (R.D.D.) acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and The Georgia Research Alliance.",

year = "2008",

doi = "10.1063/1.2832645",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

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TY - JOUR

T1 - Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates

AU - Liu, J. P.

AU - Limb, J. B.

AU - Ryou, J. H.

AU - Yoo, D.

AU - Horne, C. A.

AU - Dupuis, R. D.

AU - Wu, Z. H.

AU - Fischer, A. M.

AU - Ponce, Fernando

AU - Hanser, A. D.

AU - Liu, L.

AU - Preble, E. A.

AU - Evans, K. R.

N1 - Funding Information: Work at Georgia Tech was supported by the Department of Energy under Contract No. DE-FC26-03NT41946. Work at ASU was supported by a grant from Nichia Corporation. One of the authors (R.D.D.) acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and The Georgia Research Alliance.

PY - 2008

Y1 - 2008

N2 - Visible blue light emitting diodes have been produced on freestanding nonpolar GaN (11-20) a -plane substrates by metal-organic chemical vapor deposition. The growth conditions have been optimized for smooth growth morphology of GaN nonpolar homoepitaxial layers without surface features, leading to light emitting diode epitaxial structures that are free of crystalline defects such as threading dislocations and stacking faults. Electroluminescence of light emitting diodes exhibit peak wavelengths of ∼450 nm and are independent of current level at low current densities before the heating effects are evidenced.

AB - Visible blue light emitting diodes have been produced on freestanding nonpolar GaN (11-20) a -plane substrates by metal-organic chemical vapor deposition. The growth conditions have been optimized for smooth growth morphology of GaN nonpolar homoepitaxial layers without surface features, leading to light emitting diode epitaxial structures that are free of crystalline defects such as threading dislocations and stacking faults. Electroluminescence of light emitting diodes exhibit peak wavelengths of ∼450 nm and are independent of current level at low current densities before the heating effects are evidenced.

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DO - 10.1063/1.2832645

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JF - Applied Physics Letters

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M1 - 011123

ER -

Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates

Abstract

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