BARRIER HEIGHTS FROM OHMIC TO BANDGAP: MODIFIED Al:GaAs SCHOTTKY DIODES BY MBE.

Stephen J. Eglash, Nathan Newman, Shihong Pan, W. E. Spicer, Douglas M. Collins, Mark P. Zurakowski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations
Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages119-122
Number of pages4
StatePublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Eglash, S. J., Newman, N., Pan, S., Spicer, W. E., Collins, D. M., & Zurakowski, M. P. (1983). BARRIER HEIGHTS FROM OHMIC TO BANDGAP: MODIFIED Al:GaAs SCHOTTKY DIODES BY MBE. In Technical Digest - International Electron Devices Meeting (pp. 119-122). IEEE.