Abstract

Measurements of the transition energies of GaAsSb quantum well samples with different barrier configurations reveal that the conduction band offset of the coherently strained GaAs1-ySby/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.43±0.07. A type-I band alignment is formed for lower Sb mole fractions and a type-II band alignment is formed for higher Sb mole fractions. This occurs as a consequence of a considerable amount (58%) of the -1.58eV bandgap bowing being distributed to the conduction band. As a suitable active material for 1.3 μm emission, pseudomorphic GaAs0.643Sb0.357 grown on GaAs is determined to have a weak, 23±23 meV, type-I conduction band offset and a bandgap energy of 928±4 meV.

Original languageEnglish (US)
Article number195339
Pages (from-to)1-8
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number19
DOIs
StatePublished - Nov 2004

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Conduction bands
conduction bands
alignment
Energy gap
Bending (forming)
roots of equations
Semiconductor quantum wells
Heterojunctions
heterojunctions
quantum wells
energy
configurations
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Band edge alignment of pseudomorphic GaAs1-ySby on GaAs. / Wang, J. B.; Johnson, Shane; Chaparro, S. A.; Ding, D.; Cao, Yu; Sadofyev, Yu G.; Zhang, Yong-Hang; Gupta, J. A.; Guo, C. Z.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, No. 19, 195339, 11.2004, p. 1-8.

Research output: Contribution to journalArticle

Wang, J. B. ; Johnson, Shane ; Chaparro, S. A. ; Ding, D. ; Cao, Yu ; Sadofyev, Yu G. ; Zhang, Yong-Hang ; Gupta, J. A. ; Guo, C. Z. / Band edge alignment of pseudomorphic GaAs1-ySby on GaAs. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 70, No. 19. pp. 1-8.
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abstract = "Measurements of the transition energies of GaAsSb quantum well samples with different barrier configurations reveal that the conduction band offset of the coherently strained GaAs1-ySby/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.43±0.07. A type-I band alignment is formed for lower Sb mole fractions and a type-II band alignment is formed for higher Sb mole fractions. This occurs as a consequence of a considerable amount (58{\%}) of the -1.58eV bandgap bowing being distributed to the conduction band. As a suitable active material for 1.3 μm emission, pseudomorphic GaAs0.643Sb0.357 grown on GaAs is determined to have a weak, 23±23 meV, type-I conduction band offset and a bandgap energy of 928±4 meV.",
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AU - Sadofyev, Yu G.

AU - Zhang, Yong-Hang

AU - Gupta, J. A.

AU - Guo, C. Z.

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