Band edge alignment of pseudomorphic GaAs1-ySby on GaAs

J. B. Wang; Shane Johnson; S. A. Chaparro; D. Ding; Yu Cao; Yu G. Sadofyev; Yong-Hang Zhang; J. A. Gupta; C. Z. Guo

doi:10.1103/PhysRevB.70.195339

Band edge alignment of pseudomorphic GaAs_1-ySb_y on GaAs

J. B. Wang, Shane Johnson, S. A. Chaparro, D. Ding, Yu Cao, Yu G. Sadofyev, Yong-Hang Zhang, J. A. Gupta, C. Z. Guo

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58 Scopus citations

Abstract

Measurements of the transition energies of GaAsSb quantum well samples with different barrier configurations reveal that the conduction band offset of the coherently strained GaAs_1-ySb_y/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.43±0.07. A type-I band alignment is formed for lower Sb mole fractions and a type-II band alignment is formed for higher Sb mole fractions. This occurs as a consequence of a considerable amount (58%) of the -1.58eV bandgap bowing being distributed to the conduction band. As a suitable active material for 1.3 μm emission, pseudomorphic GaAs_0.643Sb_0.357 grown on GaAs is determined to have a weak, 23±23 meV, type-I conduction band offset and a bandgap energy of 928±4 meV.

Original language	English (US)
Article number	195339
Pages (from-to)	1-8
Number of pages	8
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.70.195339
State	Published - Nov 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{cb915fc2bfe0413789c0c275767719e2,

title = "Band edge alignment of pseudomorphic GaAs1-ySby on GaAs",

abstract = "Measurements of the transition energies of GaAsSb quantum well samples with different barrier configurations reveal that the conduction band offset of the coherently strained GaAs1-ySby/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.43±0.07. A type-I band alignment is formed for lower Sb mole fractions and a type-II band alignment is formed for higher Sb mole fractions. This occurs as a consequence of a considerable amount (58%) of the -1.58eV bandgap bowing being distributed to the conduction band. As a suitable active material for 1.3 μm emission, pseudomorphic GaAs0.643Sb0.357 grown on GaAs is determined to have a weak, 23±23 meV, type-I conduction band offset and a bandgap energy of 928±4 meV.",

author = "Wang, {J. B.} and Shane Johnson and Chaparro, {S. A.} and D. Ding and Yu Cao and Sadofyev, {Yu G.} and Yong-Hang Zhang and Gupta, {J. A.} and Guo, {C. Z.}",

note = "Funding Information: This work is partially supported by the National Science Foundation under Grant No. 0070125.",

year = "2004",

month = nov,

doi = "10.1103/PhysRevB.70.195339",

language = "English (US)",

volume = "70",

pages = "1--8",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "0163-1829",

publisher = "American Institute of Physics Publising LLC",

number = "19",

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T1 - Band edge alignment of pseudomorphic GaAs1-ySby on GaAs

AU - Wang, J. B.

AU - Johnson, Shane

AU - Chaparro, S. A.

AU - Ding, D.

AU - Cao, Yu

AU - Sadofyev, Yu G.

AU - Zhang, Yong-Hang

AU - Gupta, J. A.

AU - Guo, C. Z.

N1 - Funding Information: This work is partially supported by the National Science Foundation under Grant No. 0070125.

PY - 2004/11

Y1 - 2004/11

N2 - Measurements of the transition energies of GaAsSb quantum well samples with different barrier configurations reveal that the conduction band offset of the coherently strained GaAs1-ySby/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.43±0.07. A type-I band alignment is formed for lower Sb mole fractions and a type-II band alignment is formed for higher Sb mole fractions. This occurs as a consequence of a considerable amount (58%) of the -1.58eV bandgap bowing being distributed to the conduction band. As a suitable active material for 1.3 μm emission, pseudomorphic GaAs0.643Sb0.357 grown on GaAs is determined to have a weak, 23±23 meV, type-I conduction band offset and a bandgap energy of 928±4 meV.

AB - Measurements of the transition energies of GaAsSb quantum well samples with different barrier configurations reveal that the conduction band offset of the coherently strained GaAs1-ySby/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.43±0.07. A type-I band alignment is formed for lower Sb mole fractions and a type-II band alignment is formed for higher Sb mole fractions. This occurs as a consequence of a considerable amount (58%) of the -1.58eV bandgap bowing being distributed to the conduction band. As a suitable active material for 1.3 μm emission, pseudomorphic GaAs0.643Sb0.357 grown on GaAs is determined to have a weak, 23±23 meV, type-I conduction band offset and a bandgap energy of 928±4 meV.

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JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

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ER -

Band edge alignment of pseudomorphic GaAs_1-ySb_y on GaAs

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