Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy

Kong-Thon Tsen, D. K. Ferry, Jye Shyang Wang, Chao Hsiung Huang, Hao Hsiung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron ballistic transport and in InP-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T = 300 K. The time-evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n ≅ 5×1016 cm-3, electrons travel quasi-ballistically - electron drift velocity increases linearly with time, during the first 150fs. After 150fs it increases sublinearly until reaching the peak value at about 300fs. The electron drift velocity then decreases to its steady-state value.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages266-271
Number of pages6
ISBN (Print)0819430943
StatePublished - 1999
EventProceedings of the 1999 Ultrafast Phenomena in Semiconductors III - San Jose, CA, USA
Duration: Jan 27 1999Jan 29 1999

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3624
ISSN (Print)0277-786X

Other

OtherProceedings of the 1999 Ultrafast Phenomena in Semiconductors III
CitySan Jose, CA, USA
Period1/27/991/29/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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