Atomistic aspects of silicide reactions studied with STM

Peter Bennett, S. A. Parikh, M. Y. Lee, David G. Cahill, M. Copel, R. M. Tromp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We discuss atomistic aspects of the silicide contact reaction inferred primarily from STM observations of the prototype system Co/Si(111). For room temperature deposition and low coverage (0.01M1) we find that metal atoms exist as near-surface interstitials within the 7×7 reconstruction. Bond breaking associated with silicide formation occurs only at higher coverages. Deposition at 320C results in flat-topped triangular islands of epitaxial CoSi2 with a metastable 7-fold (111) interface, stabilized by the lateral silicon-silicide interface along the island edges. Some islands are covered with a 2×2 array of silicon adatoms. Very high temperature annealing (1200C) results in an 'impurity stabilized 1×1' surface which is in fact a lattice gas of ring-clusters that appear like tiny donuts or bagels in empty states STM images. These structures phase-separate from the clean 7×7 structure upon cooling below 850C.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsRobert W. Fathauer, Siegfried Mantl, Leo J. Schowalter, K.N. Tu
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages239-247
Number of pages9
Volume320
ISBN (Print)1558992197
StatePublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

Fingerprint

Silicon
Adatoms
Phase structure
Gases
Metals
Annealing
Impurities
Cooling
Atoms
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Bennett, P., Parikh, S. A., Lee, M. Y., Cahill, D. G., Copel, M., & Tromp, R. M. (1994). Atomistic aspects of silicide reactions studied with STM. In R. W. Fathauer, S. Mantl, L. J. Schowalter, & K. N. Tu (Eds.), Materials Research Society Symposium Proceedings (Vol. 320, pp. 239-247). Pittsburgh, PA, United States: Publ by Materials Research Society.

Atomistic aspects of silicide reactions studied with STM. / Bennett, Peter; Parikh, S. A.; Lee, M. Y.; Cahill, David G.; Copel, M.; Tromp, R. M.

Materials Research Society Symposium Proceedings. ed. / Robert W. Fathauer; Siegfried Mantl; Leo J. Schowalter; K.N. Tu. Vol. 320 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. p. 239-247.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bennett, P, Parikh, SA, Lee, MY, Cahill, DG, Copel, M & Tromp, RM 1994, Atomistic aspects of silicide reactions studied with STM. in RW Fathauer, S Mantl, LJ Schowalter & KN Tu (eds), Materials Research Society Symposium Proceedings. vol. 320, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 239-247, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/29/93.
Bennett P, Parikh SA, Lee MY, Cahill DG, Copel M, Tromp RM. Atomistic aspects of silicide reactions studied with STM. In Fathauer RW, Mantl S, Schowalter LJ, Tu KN, editors, Materials Research Society Symposium Proceedings. Vol. 320. Pittsburgh, PA, United States: Publ by Materials Research Society. 1994. p. 239-247
Bennett, Peter ; Parikh, S. A. ; Lee, M. Y. ; Cahill, David G. ; Copel, M. ; Tromp, R. M. / Atomistic aspects of silicide reactions studied with STM. Materials Research Society Symposium Proceedings. editor / Robert W. Fathauer ; Siegfried Mantl ; Leo J. Schowalter ; K.N. Tu. Vol. 320 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. pp. 239-247
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