@inproceedings{fb03019ca602494bb04eeed577fe68f9,
title = "Atomistic aspects of silicide reactions studied with STM",
abstract = "We discuss atomistic aspects of the silicide contact reaction inferred primarily from STM observations of the prototype system Co/Si(111). For room temperature deposition and low coverage (0.01M1) we find that metal atoms exist as near-surface interstitials within the 7×7 reconstruction. Bond breaking associated with silicide formation occurs only at higher coverages. Deposition at 320C results in flat-topped triangular islands of epitaxial CoSi2 with a metastable 7-fold (111) interface, stabilized by the lateral silicon-silicide interface along the island edges. Some islands are covered with a 2×2 array of silicon adatoms. Very high temperature annealing (1200C) results in an 'impurity stabilized 1×1' surface which is in fact a lattice gas of ring-clusters that appear like tiny donuts or bagels in empty states STM images. These structures phase-separate from the clean 7×7 structure upon cooling below 850C.",
author = "Peter Bennett and Parikh, {S. A.} and Lee, {M. Y.} and Cahill, {David G.} and M. Copel and Tromp, {R. M.}",
year = "1994",
language = "English (US)",
isbn = "1558992197",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "239--247",
editor = "Fathauer, {Robert W.} and Siegfried Mantl and Schowalter, {Leo J.} and K.N. Tu",
booktitle = "Silicides, Germanides, and Their Interfaces",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",
}