Atomic displacement free interfaces and atomic registry in SiO 2/(1×1) Si(100)

Justin M. Shaw, N. Herbots, Q. B. Hurst, D. Bradley, Robert Culbertson, V. Atluri, K. T. Queeney

Research output: Contribution to journalArticle

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Abstract

We use ion beam analysis to probe the structure and interface of ultrathin thermal oxide films grown on (1×1) Si(100) surfaces prepared using the Herbots-Atluri [U.S. patent No. 6,613,677 (Sept. 2, 2003)] wet chemical clean. We discover that these oxide layers are structurally registered with the substrate lattice with no interfacial structural disorder. Registry of Si atoms is most pronounced along 〈111〉 directions relative to the Si substrate, consistent with a Β -cristobalite epitaxial phase. This structurally registered phase transitions to an amorphous structure approximately 2 nm from the interface.

Original languageEnglish (US)
Article number104109
JournalJournal of Applied Physics
Volume100
Issue number10
DOIs
StatePublished - Dec 8 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Shaw, J. M., Herbots, N., Hurst, Q. B., Bradley, D., Culbertson, R., Atluri, V., & Queeney, K. T. (2006). Atomic displacement free interfaces and atomic registry in SiO 2/(1×1) Si(100). Journal of Applied Physics, 100(10), [104109]. https://doi.org/10.1063/1.2358835