Asymmetric, multi-conductor low-coupling structures for high-speed, high-density digital interconnects

James P K Gilb, Constantine Balanis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Due to the increasing speeds of digital circuits and the small interline spacings, a full-wave analysis of multilayer, multiconductor structures is required to accurately predict the coupling and crosstalk on these structures. Using the spectral domain approach, it is shown that substrate compensation can be used for asymmetric coupled lines and symmetric multiconductor lines. Some of the characteristics of substrate compensated low-coupling structures were also investigated, showing that one substrate configuration can be used to reduce coupling and crosstalk with a variety of conductor configurations. It is concluded that, by designing high-speed interconnects with substrate compensation, it will be possible to achieve an extremely high density of signal conductors, using interline spacings of less than one center conductor width, while keeping crosstalk and coupling distortion to a minimum.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
PublisherPubl by IEEE
Pages663-666
Number of pages4
Volume2
StatePublished - 1991
Event1991 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) - Boston, MA, USA
Duration: Jun 10 1991Jun 14 1991

Other

Other1991 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3)
CityBoston, MA, USA
Period6/10/916/14/91

Fingerprint

conductors
Crosstalk
crosstalk
high speed
Substrates
spacing
digital electronics
Digital circuits
configurations
laminates
Multilayers
Compensation and Redress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Gilb, J. P. K., & Balanis, C. (1991). Asymmetric, multi-conductor low-coupling structures for high-speed, high-density digital interconnects. In IEEE MTT-S International Microwave Symposium Digest (Vol. 2, pp. 663-666). Publ by IEEE.

Asymmetric, multi-conductor low-coupling structures for high-speed, high-density digital interconnects. / Gilb, James P K; Balanis, Constantine.

IEEE MTT-S International Microwave Symposium Digest. Vol. 2 Publ by IEEE, 1991. p. 663-666.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gilb, JPK & Balanis, C 1991, Asymmetric, multi-conductor low-coupling structures for high-speed, high-density digital interconnects. in IEEE MTT-S International Microwave Symposium Digest. vol. 2, Publ by IEEE, pp. 663-666, 1991 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3), Boston, MA, USA, 6/10/91.
Gilb JPK, Balanis C. Asymmetric, multi-conductor low-coupling structures for high-speed, high-density digital interconnects. In IEEE MTT-S International Microwave Symposium Digest. Vol. 2. Publ by IEEE. 1991. p. 663-666
Gilb, James P K ; Balanis, Constantine. / Asymmetric, multi-conductor low-coupling structures for high-speed, high-density digital interconnects. IEEE MTT-S International Microwave Symposium Digest. Vol. 2 Publ by IEEE, 1991. pp. 663-666
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