Abstract
The advantages of the use of metal-chalcogenide systems, and the As-S/Ag system in particular, in integrated optics, are described. The As-S/Ag system has a number of desirable properties which make it attractive for applications in integrated optics, and these are discussed. It is shown that the metal photodissolution effect has an inherently high spatial resolution, well into the submicron range using optical lithography and on the scale of a few tens of nanometers or less with electron-beam exposure. This unusual combination of properties, their easy fabrication in thin- and thick-film form, and the ability to selectively etch either the undoped or doped material make the chalcogenide compounds uniquely appropriate to a variety of applications in integrated optics.
| Original language | English (US) |
|---|---|
| Title of host publication | Sixth Int VLSI Multilevel Interconnect Conf |
| Editors | Anon |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | Publ by IEEE |
| Pages | 251-257 |
| Number of pages | 7 |
| State | Published - 1989 |
| Event | Sixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA Duration: Jun 12 1989 → Jun 13 1989 |
Other
| Other | Sixth International VLSI Multilevel Interconnection Conference |
|---|---|
| City | Santa Clara, CA, USA |
| Period | 6/12/89 → 6/13/89 |
ASJC Scopus subject areas
- General Engineering