Abstract
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
Original language | English (US) |
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Pages (from-to) | 758-760 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 36 |
Issue number | 9 |
DOIs | |
State | Published - 1980 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)