Abstract
Two different electron microscopy techniques were used to study a Ru/Si multilayer (ML) film. The structure of the multilayer was characterized by high-resolution electron microscopy (HREM). The multilayer compositional profile and its thermal stability were studied by using high-angle annular dark-field (HAADF) microscopy. Initially, the Ru/Si ML was found to have a well-defined multilayer structure. After annealing of the sample at 150°C for 30 minutes, we observed that the Ru and Si layers were highly interdiffused with large Ru silicide crystals being formed in the multilayer film.
Original language | English (US) |
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Pages (from-to) | 167-175 |
Number of pages | 9 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1547 |
DOIs | |
State | Published - Jan 1 1992 |
Event | Multilayer Optics for Advanced X-Ray Applications 1991 - San Diego, United States Duration: Jul 21 1991 → … |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering