Annealing studies of Ru/Si multilayer by high-angle annular dark field microscopy and HREM

Y. Cheng, J. Liu, M. B. Stearns, D. G. Stearns

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Two different electron microscopy techniques were used to study a Ru/Si multilayer (ML) film. The structure of the multilayer was characterized by high-resolution electron microscopy (HREM). The multilayer compositional profile and its thermal stability were studied by using high-angle annular dark-field (HAADF) microscopy. Initially, the Ru/Si ML was found to have a well-defined multilayer structure. After annealing of the sample at 150°C for 30 minutes, we observed that the Ru and Si layers were highly interdiffused with large Ru silicide crystals being formed in the multilayer film.

Original languageEnglish (US)
Pages (from-to)167-175
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1547
DOIs
StatePublished - Jan 1 1992
EventMultilayer Optics for Advanced X-Ray Applications 1991 - San Diego, United States
Duration: Jul 21 1991 → …

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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