Annealing-induced-type conversion of GaInNAs

Sarah Kurtz; J. F. Geisz; D. J. Friedman; W. K. Metzger; R. R. King; N. H. Karam

doi:10.1063/1.1643775

Annealing-induced-type conversion of GaInNAs

Sarah Kurtz, J. F. Geisz, D. J. Friedman, W. K. Metzger, R. R. King, N. H. Karam

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23 Scopus citations

Abstract

The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 ¹⁷ cm ^-3.

Original language	English (US)
Pages (from-to)	2505-2508
Number of pages	4
Journal	Journal of Applied Physics
Volume	95
Issue number	5
DOIs	https://doi.org/10.1063/1.1643775
State	Published - Mar 1 2004
Externally published	Yes

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General Physics and Astronomy

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abstract = "The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 17 cm -3.",

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AU - Kurtz, Sarah

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Metzger, W. K.

AU - King, R. R.

AU - Karam, N. H.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 17 cm -3.

AB - The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 17 cm -3.

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Annealing-induced-type conversion of GaInNAs

Abstract

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