Annealing-induced-type conversion of GaInNAs

Sarah Kurtz, J. F. Geisz, D. J. Friedman, W. K. Metzger, R. R. King, N. H. Karam

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 17 cm -3.

Original languageEnglish (US)
Pages (from-to)2505-2508
Number of pages4
JournalJournal of Applied Physics
Volume95
Issue number5
DOIs
StatePublished - Mar 1 2004
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Annealing-induced-type conversion of GaInNAs'. Together they form a unique fingerprint.

  • Cite this

    Kurtz, S., Geisz, J. F., Friedman, D. J., Metzger, W. K., King, R. R., & Karam, N. H. (2004). Annealing-induced-type conversion of GaInNAs. Journal of Applied Physics, 95(5), 2505-2508. https://doi.org/10.1063/1.1643775