The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 17 cm -3.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - Mar 1 2004|
ASJC Scopus subject areas
- Physics and Astronomy(all)