Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect

Houqiang Fu, Zhijian Lu, Yuji Zhao

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n0), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results. A weaker PSF effect was found for low-droop semipolar LEDs possibly due to small quantum confined Stark effect, short carrier lifetime, and small average carrier density. A very good agreement between experimental data and the theoretical modeling was obtained for low-droop semipolar LEDs with weak PSF effect. These results suggest the low droop performance may be explained by different mechanisms for semipolar LEDs.

Original languageEnglish (US)
Article number065013
JournalAIP Advances
Volume6
Issue number6
DOIs
StatePublished - Jun 1 2016

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light emitting diodes
quantum wells
Stark effect
carrier lifetime
quantum efficiency
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect. / Fu, Houqiang; Lu, Zhijian; Zhao, Yuji.

In: AIP Advances, Vol. 6, No. 6, 065013, 01.06.2016.

Research output: Contribution to journalArticle

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