AN OPTIMIZED PROCESS FORMING SELF-ENCAPSULATED CU FILMS BY RAPID THERMAL

Terry Alford (Inventor)

Research output: Patent

Abstract

Copper (Cu) is ;an attractive material for interconnect metallization in future integrated circuits (IC) technologies due to its lower bulk resistivity and higher reliability against electromigration. These two characteristics will allow faster signal propagation (i.e., fast computers) and better reliability (i.e., less expensive to operate and maintain). However, Cu is not totally compatible with the current IC technology. Once the (
Original languageEnglish (US)
StatePublished - Jan 1 1900

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Integrated circuits
Electromigration
Metallizing
Copper
Hot Temperature

Cite this

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abstract = "Copper (Cu) is ;an attractive material for interconnect metallization in future integrated circuits (IC) technologies due to its lower bulk resistivity and higher reliability against electromigration. These two characteristics will allow faster signal propagation (i.e., fast computers) and better reliability (i.e., less expensive to operate and maintain). However, Cu is not totally compatible with the current IC technology. Once the (",
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N2 - Copper (Cu) is ;an attractive material for interconnect metallization in future integrated circuits (IC) technologies due to its lower bulk resistivity and higher reliability against electromigration. These two characteristics will allow faster signal propagation (i.e., fast computers) and better reliability (i.e., less expensive to operate and maintain). However, Cu is not totally compatible with the current IC technology. Once the (

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M3 - Patent

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