An examination of high-injection physics of silicon p-n junctions with applications in photocurrent modeling

Joseph D. Gleason, Hugh Barnaby, Michael L. Alles, Garrett J. Schlenvogt

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Techniques for modeling radiation-induced junction photocurrents often rely on assumptions that require the device remain in low-level injection; however transient radiation events can induce high-level injection conditions. Due to a combination of physical accuracy and computational efficiency, analytical models are often preferred to empirical and numerical modeling techniques. A more thorough understanding of the physical response can help improve the efficacy of simple modeling techniques, e.g. equivalent circuit modeling. This work explores the fundamental physical response of a p-n junction as it approaches, and after it reaches high-level injection (HLI) conditions through analysis of TCAD simulations. From the TCAD simulations and experimentally obtained data, this physical response is presented as a simple equivalent circuit model that acts as a hybrid between numerical and empirical modeling methodologies.

Original languageEnglish (US)
Article number6678663
Pages (from-to)4570-4575
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume60
Issue number6
DOIs
StatePublished - Dec 2013

Keywords

  • High-level injection
  • p-n junction
  • photocurrent
  • single-event effects
  • single-event transient

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'An examination of high-injection physics of silicon p-n junctions with applications in photocurrent modeling'. Together they form a unique fingerprint.

Cite this