AlxGa1-xN (0≤x≤1) nanocrystalline powder by pyrolysis route

R. Garcia, S. Srinivasan, O. E. Contreras, A. C. Thomas, Fernando Ponce

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A novel method to synthesize nanocrystalline AlxGa1-xN (0≤x≤1) powders is presented in this work. AlGaN nanocrystallites with the wurtzite structure were produced by thermal decomposition of a gallium-aluminum complex compound at 1000 °C in a three-zone horizontal quartz tube reactor under high-purity ammonia atmosphere. The crystallites showed a hexagonal structure, high homogeneity, and a narrow particle-size distribution at around 50 nm. A continuous composition range from 0 to 1 mol fraction can be reached by this method, allowing high control on the gallium and aluminum composition by monitoring the stoichiometry of the reaction between the metal nitrates and carbohydrazide. Low-temperature photoluminescence and cathodoluminescence studies showed that some impurities, such as carbon and oxygen, are unintentionally present in the final product and affect the optical properties. Subsequent thermal treatments between 900 and 1100 °C under an ammonia atmosphere significantly improved the quality of these materials.

Original languageEnglish (US)
Pages (from-to)198-203
Number of pages6
JournalJournal of Crystal Growth
Volume308
Issue number1
DOIs
StatePublished - Oct 1 2007

Fingerprint

Nanocrystalline powders
Gallium
Aluminum
Ammonia
gallium
pyrolysis
ammonia
Pyrolysis
routes
aluminum
atmospheres
complex compounds
Nanocrystallites
Quartz
Cathodoluminescence
cathodoluminescence
Chemical analysis
particle size distribution
Crystallites
Stoichiometry

Keywords

  • A1. Solid solutions
  • B1. Nanomaterials
  • B1. Nitrides
  • B2. Phosphors
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

AlxGa1-xN (0≤x≤1) nanocrystalline powder by pyrolysis route. / Garcia, R.; Srinivasan, S.; Contreras, O. E.; Thomas, A. C.; Ponce, Fernando.

In: Journal of Crystal Growth, Vol. 308, No. 1, 01.10.2007, p. 198-203.

Research output: Contribution to journalArticle

Garcia, R. ; Srinivasan, S. ; Contreras, O. E. ; Thomas, A. C. ; Ponce, Fernando. / AlxGa1-xN (0≤x≤1) nanocrystalline powder by pyrolysis route. In: Journal of Crystal Growth. 2007 ; Vol. 308, No. 1. pp. 198-203.
@article{b17f09b4c8ad4ef9abc0c8703b544d7b,
title = "AlxGa1-xN (0≤x≤1) nanocrystalline powder by pyrolysis route",
abstract = "A novel method to synthesize nanocrystalline AlxGa1-xN (0≤x≤1) powders is presented in this work. AlGaN nanocrystallites with the wurtzite structure were produced by thermal decomposition of a gallium-aluminum complex compound at 1000 °C in a three-zone horizontal quartz tube reactor under high-purity ammonia atmosphere. The crystallites showed a hexagonal structure, high homogeneity, and a narrow particle-size distribution at around 50 nm. A continuous composition range from 0 to 1 mol fraction can be reached by this method, allowing high control on the gallium and aluminum composition by monitoring the stoichiometry of the reaction between the metal nitrates and carbohydrazide. Low-temperature photoluminescence and cathodoluminescence studies showed that some impurities, such as carbon and oxygen, are unintentionally present in the final product and affect the optical properties. Subsequent thermal treatments between 900 and 1100 °C under an ammonia atmosphere significantly improved the quality of these materials.",
keywords = "A1. Solid solutions, B1. Nanomaterials, B1. Nitrides, B2. Phosphors, B2. Semiconducting III-V materials",
author = "R. Garcia and S. Srinivasan and Contreras, {O. E.} and Thomas, {A. C.} and Fernando Ponce",
year = "2007",
month = "10",
day = "1",
doi = "10.1016/j.jcrysgro.2007.07.048",
language = "English (US)",
volume = "308",
pages = "198--203",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - AlxGa1-xN (0≤x≤1) nanocrystalline powder by pyrolysis route

AU - Garcia, R.

AU - Srinivasan, S.

AU - Contreras, O. E.

AU - Thomas, A. C.

AU - Ponce, Fernando

PY - 2007/10/1

Y1 - 2007/10/1

N2 - A novel method to synthesize nanocrystalline AlxGa1-xN (0≤x≤1) powders is presented in this work. AlGaN nanocrystallites with the wurtzite structure were produced by thermal decomposition of a gallium-aluminum complex compound at 1000 °C in a three-zone horizontal quartz tube reactor under high-purity ammonia atmosphere. The crystallites showed a hexagonal structure, high homogeneity, and a narrow particle-size distribution at around 50 nm. A continuous composition range from 0 to 1 mol fraction can be reached by this method, allowing high control on the gallium and aluminum composition by monitoring the stoichiometry of the reaction between the metal nitrates and carbohydrazide. Low-temperature photoluminescence and cathodoluminescence studies showed that some impurities, such as carbon and oxygen, are unintentionally present in the final product and affect the optical properties. Subsequent thermal treatments between 900 and 1100 °C under an ammonia atmosphere significantly improved the quality of these materials.

AB - A novel method to synthesize nanocrystalline AlxGa1-xN (0≤x≤1) powders is presented in this work. AlGaN nanocrystallites with the wurtzite structure were produced by thermal decomposition of a gallium-aluminum complex compound at 1000 °C in a three-zone horizontal quartz tube reactor under high-purity ammonia atmosphere. The crystallites showed a hexagonal structure, high homogeneity, and a narrow particle-size distribution at around 50 nm. A continuous composition range from 0 to 1 mol fraction can be reached by this method, allowing high control on the gallium and aluminum composition by monitoring the stoichiometry of the reaction between the metal nitrates and carbohydrazide. Low-temperature photoluminescence and cathodoluminescence studies showed that some impurities, such as carbon and oxygen, are unintentionally present in the final product and affect the optical properties. Subsequent thermal treatments between 900 and 1100 °C under an ammonia atmosphere significantly improved the quality of these materials.

KW - A1. Solid solutions

KW - B1. Nanomaterials

KW - B1. Nitrides

KW - B2. Phosphors

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=34748904022&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34748904022&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.07.048

DO - 10.1016/j.jcrysgro.2007.07.048

M3 - Article

VL - 308

SP - 198

EP - 203

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -