Abstract

A goal for concentrating photovoltaics is to realize efficiencies over 50%. Recent 4J bonded solar cells show a path to such high efficiency devices by separately growing the top and bottom solar cells. Present experimental devices use InP-based materials for the bottom junctions. III-Sb solar cells can be good candidates for bottom solar cells. Sb-containing III-V alloys have shown high electron mobility, wide band gap range including small band gaps, flexible band alignment, and small effective electron mass [1]. In addition, GaSb alloys can be grown with low defect densities on GaAs. This paper investigates GaSb-based solar cells. We show AlGaSb based solar cells grown directly on semi-insulator GaAs (001) substrates by Molecular Beam Epitaxy (MBE). Device and structural investigations have been performed to assess the electrical properties and material quality. Devices in the GaSb material system show Woc of 0.30, a very high value for a low band gap solar cell. To control the device properties, GaSb based solar cells grown on GaAs (100) substrates were compared to the devices grown on GaSb substrates.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Fingerprint

Molecular beam epitaxy
Solar cells
Energy gap
Substrates
gallium arsenide
Defect density
Electron mobility
Electric properties
Electrons

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Vadiee, E., Zhang, C., Faleev, N. N., Addamane, S., Wang, S., Ponce, F., ... Honsberg, C. (2018). AlGaSb based solar cells grown on GaAs by molecular beam epitaxy. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366529

AlGaSb based solar cells grown on GaAs by molecular beam epitaxy. / Vadiee, Ehsan; Zhang, Chaomin; Faleev, Nikolai N.; Addamane, Sadhvikas; Wang, Shuo; Ponce, Fernando; Balakrishnan, Ganesh; Honsberg, Christiana.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vadiee, E, Zhang, C, Faleev, NN, Addamane, S, Wang, S, Ponce, F, Balakrishnan, G & Honsberg, C 2018, AlGaSb based solar cells grown on GaAs by molecular beam epitaxy. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366529
Vadiee E, Zhang C, Faleev NN, Addamane S, Wang S, Ponce F et al. AlGaSb based solar cells grown on GaAs by molecular beam epitaxy. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/PVSC.2017.8366529
Vadiee, Ehsan ; Zhang, Chaomin ; Faleev, Nikolai N. ; Addamane, Sadhvikas ; Wang, Shuo ; Ponce, Fernando ; Balakrishnan, Ganesh ; Honsberg, Christiana. / AlGaSb based solar cells grown on GaAs by molecular beam epitaxy. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
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