AlGaN/GaN High electron mobility transistor grown and fabricated on ZrTi metallic alloy buffer layers

Fan Ren, Stephen J. Pearton, Shihyun Ahn, Yi Hsuan Lin, Francisco Machuca, Robert Weiss, Alex Welsh, Martha McCartney, David Smith, Ivan I. Kravchenko

Research output: Contribution to journalEditorial

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06, 0.05 and 0.08 for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. The estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 108 cm−2 range.

Original languageEnglish (US)
Pages (from-to)S3078-S3080
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number11
DOIs
StatePublished - Jan 1 2017

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High electron mobility transistors
Buffer layers
Transmission electron microscopy
X rays
Full width at half maximum
Crystal lattices
Lattice constants
aluminum gallium nitride
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ren, F., Pearton, S. J., Ahn, S., Lin, Y. H., Machuca, F., Weiss, R., ... Kravchenko, I. I. (2017). AlGaN/GaN High electron mobility transistor grown and fabricated on ZrTi metallic alloy buffer layers. ECS Journal of Solid State Science and Technology, 6(11), S3078-S3080. https://doi.org/10.1149/2.0161711jss

AlGaN/GaN High electron mobility transistor grown and fabricated on ZrTi metallic alloy buffer layers. / Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; Lin, Yi Hsuan; Machuca, Francisco; Weiss, Robert; Welsh, Alex; McCartney, Martha; Smith, David; Kravchenko, Ivan I.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 11, 01.01.2017, p. S3078-S3080.

Research output: Contribution to journalEditorial

Ren, Fan ; Pearton, Stephen J. ; Ahn, Shihyun ; Lin, Yi Hsuan ; Machuca, Francisco ; Weiss, Robert ; Welsh, Alex ; McCartney, Martha ; Smith, David ; Kravchenko, Ivan I. / AlGaN/GaN High electron mobility transistor grown and fabricated on ZrTi metallic alloy buffer layers. In: ECS Journal of Solid State Science and Technology. 2017 ; Vol. 6, No. 11. pp. S3078-S3080.
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abstract = "AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06◦, 0.05◦ and 0.08◦ for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. The estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 108 cm−2 range.",
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AU - Machuca, Francisco

AU - Weiss, Robert

AU - Welsh, Alex

AU - McCartney, Martha

AU - Smith, David

AU - Kravchenko, Ivan I.

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N2 - AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06◦, 0.05◦ and 0.08◦ for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. The estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 108 cm−2 range.

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